Highly-detective tunable band-selective photodetector based on RF sputtered amorphous SiC thin-film: Effect of sputtering power
In this paper, a new high-performance tunable band-selective (UV-Visible) photodetector
(PD) based on RF sputtered a-SiC active layer is demonstrated. SiC thin-films were …
(PD) based on RF sputtered a-SiC active layer is demonstrated. SiC thin-films were …
Ultralow-Noise Nano-Ag/Amorphous Ga2O3 UV Photodetector Realized by Introducing Local Schottky Junctions
An amorphous Ga2O3-based photodetector (PD) generally inevitably suffers from
unsatisfactory large dark current due to the high-density defects. Herein, the sporadic Ag …
unsatisfactory large dark current due to the high-density defects. Herein, the sporadic Ag …
Facile Synthesis of Two Dimensional (2D) V2O5 Nanosheets Film towards Photodetectors
S Wang, L Wu, H Zhang, Z Wang, Q Qin, X Wang, Y Lu… - Materials, 2022 - mdpi.com
Most of the studies focused on V2O5 have been devoted to obtaining specific morphology
and microstructure for its intended applications. Two dimensional (2D) V2O5 has the most …
and microstructure for its intended applications. Two dimensional (2D) V2O5 has the most …
Temperature-dependent optical properties of some mixtures nematic liquid crystal
The presence of optical anisotropy in liquid crystals (LCs) has caused these materials to
have dual refractive indices: ordinary (no) and extra-ordinary (ne). Many fundamental …
have dual refractive indices: ordinary (no) and extra-ordinary (ne). Many fundamental …
Fabrication of ᵞ-In₂Se₃-Based Photodetector Using RF Magnetron Sputtering and Investigations of Its Temperature-Dependent Properties
Metal chalcogenide indium selenide (In2Se3) is attracting increasing research interest for
photodetector applications due to its excellent photoresponse and superior stability under …
photodetector applications due to its excellent photoresponse and superior stability under …
Ultrasensitive, Highly Repeatable, Ultrafast MoO3/P-Si Heterostructure-Based Photodetector
B Sharmila, P Dwivedi - IEEE Sensors Journal, 2022 - ieeexplore.ieee.org
This article presents the development of an ultrasensitive molybdenum trioxide/porous
silicon (MoO3/P-Si) heterostructure-based photodetector. Process scalability, high speed …
silicon (MoO3/P-Si) heterostructure-based photodetector. Process scalability, high speed …
AlGaN-based self-powered solar-blind UV focal plane array imaging photosensors: material growth, device preparation, and functional verification
Y Chen, X Fan, Z Zhang, G Miao, H Jiang… - IEEE Sensors …, 2023 - ieeexplore.ieee.org
This article reports the development of hybrid AlGaN-based self-powered solar-blind
ultraviolet (UV) focal plane array (FPA) imaging photosensors from material growth and …
ultraviolet (UV) focal plane array (FPA) imaging photosensors from material growth and …
Near-far IR photoconductivity damping in hyperdoped Si at low temperatures
Silicon pn junction photoelement fabricated on a p-doped wafer by sulfur-based n-doping of
its sub-micron thick surface layer, exhibits at liquid-helium temperatures impurity-based near …
its sub-micron thick surface layer, exhibits at liquid-helium temperatures impurity-based near …
Broadband spectral photodetector based on all-amorphous ZnO/Si heterostructure incorporating Ag intermediate thin-films
The purpose of the present work is to experimentally investigate a new high-performance
broadband photodetector (PD) based on all-amorphous ZnO/Si heterostructure …
broadband photodetector (PD) based on all-amorphous ZnO/Si heterostructure …
CMOS-Compatible Ultraviolet Photodetector Based on p-Nickel-Oxide/n-Indium-Gallium-Zinc-Oxide Heterojunction Diode
The detection of UVA rays (wavelength of 315–400 nm) is of great interest in technological
applications and scientific research. Here, this work demonstrates a complementary metal …
applications and scientific research. Here, this work demonstrates a complementary metal …