Symmetric Circuit Layout With Decoupled Modular Switching Cells for Multiparalleled SiC mosfets
Parallel connection of silicon carbide metal-oxide-semiconductor transistors are widely used
in large-current-capacity applications or power modules. However, current imbalance …
in large-current-capacity applications or power modules. However, current imbalance …
Power loop busbars design and experimental validation of 1 kV, 5 kA solid-state circuit breaker using parallel connected RB-IGCTs
This article investigates the design of a 1 kV, 5 kA solid-state circuit breaker by using parallel
connection of reverse blocking IGCTs (RB-IGCT). The presented breaker topology is based …
connection of reverse blocking IGCTs (RB-IGCT). The presented breaker topology is based …
Experimental Insights into the MW Range Dual Active Bridge with Silicon Carbide Devices
S Heinig, D Siemaszko, R Baumann… - … (IPEC-Himeji 2022 …, 2022 - ieeexplore.ieee.org
Alongside the resonant topology of the Power Electronics Transformer, the Dual Active
Bridge is one potential topology candidate for various LVDC and MVDC applications. For its …
Bridge is one potential topology candidate for various LVDC and MVDC applications. For its …
Dynamic current balancing for paralleled SiC MOSFETs with circuit mismatches considering circulating c urrent in drive circuit
Parallel operation of silicon carbide (SiC) metal oxide semiconductor field effect transistors
MOSFET s is necessary for high power applications. However, the dynamic current sharing …
MOSFET s is necessary for high power applications. However, the dynamic current sharing …
Analysis on static current sharing of N-paralleled silicon carbide MOSFETs
The influences of on-resistances and parasitic elements on the static current sharing of N-
paralleled discrete silicon carbide (SiC) MOSFETs are analyzed in this paper. First of all, the …
paralleled discrete silicon carbide (SiC) MOSFETs are analyzed in this paper. First of all, the …
Investigation into Current Sharing of Parallel SiC MOSFET Modules using a Gate-Driver with Sub-Nanosecond Time-Skew Capability
S Neira, R Mathieson, M Parker… - 2023 25th European …, 2023 - ieeexplore.ieee.org
This paper studies the current sharing behaviour of parallel-connected Silicon Carbide (SiC)
modules, using a gate-driver capable of implementing sub-nanosecond delays between …
modules, using a gate-driver capable of implementing sub-nanosecond delays between …
Optimization of 1-mw solar inverter with 1.7-kv sic mosfet module
KB Park, F Kieferndorf, RM Burkart… - 2020 IEEE Workshop …, 2020 - ieeexplore.ieee.org
Feasibility study of high current rating 1.7-kV SiC MOSFET module is carried out targeting for
high power 1.5-kV PV central inverter. Based on electrical and thermal characterization data …
high power 1.5-kV PV central inverter. Based on electrical and thermal characterization data …