Ultrawide-bandgap semiconductors: An overview
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …
renaissance exemplified by advances in material-level understanding, extensions of known …
Germicidal ultraviolet LEDs: A review of applications and semiconductor technologies
Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …
preventing future pandemics, improving health outcomes, and disinfecting water sources …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection
Z Zhang, M Kushimoto, A Yoshikawa… - Applied Physics …, 2022 - iopscience.iop.org
We demonstrated continuous-wave lasing of an AlGaN-based ultraviolet laser diode,
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …
[HTML][HTML] Review on the progress of AlGaN-based ultraviolet light-emitting diodes
Y Chen, J Ben, F Xu, J Li, Y Chen, X Sun, D Li - Fundamental Research, 2021 - Elsevier
AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (AlGa)O alloys
JB Varley - Journal of Materials Research, 2021 - Springer
Alloys between Ga 2 O 3 and Al 2 O 3 (AGO) present a rich material space exhibiting
numerous structural phases with unique optoelectronic properties that make them attractive …
numerous structural phases with unique optoelectronic properties that make them attractive …
[HTML][HTML] The role of chemical potential in compensation control in Si: AlGaN
Reduction in compensation in Si-doped Al-rich AlGaN is demonstrated via chemical
potential control (CPC). The chemical potentials and the resulting formation energies of …
potential control (CPC). The chemical potentials and the resulting formation energies of …
High-temperature performance of AlN MESFETs with epitaxially grown n-type AlN channel layers
M Hiroki, Y Taniyasu… - IEEE Electron Device …, 2022 - ieeexplore.ieee.org
We fabricated AlN metal semiconductor field effect transistors (MESFETs) with an epitaxially
grown n-type AlN channel layer and characterized the temperature dependence of their …
grown n-type AlN channel layer and characterized the temperature dependence of their …
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
[HTML][HTML] Recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate
Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4
eV of GaN, have attracted great attention recently. As a typical representative, wurtzite …
eV of GaN, have attracted great attention recently. As a typical representative, wurtzite …