Surface sensitive synchrotron x-ray photoelectron spectroscopy (XPS) and real-time in situ
XPS were used to study the thermal stability of the hydroxyl termination and downward band …

Diamond is known as the ultimate semiconductor material for electric devices with excellent
properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility …

Ordered graphene films have been fabricated on Fe-treated SiC and diamond surfaces
using the catalytic conversion of sp3 to sp2 carbon. In comparison with the bare SiC (0001) …

Density functional theory calculations were performed to model the adsorption of up to 1
monolayer (ML) of aluminium on the bare and O-terminated (1 0 0) diamond surface. Large …

The stability of the hydroxyl termination and downward band bending on the m-plane
(101̅0) and a-plane (112̅0) faces of ZnO single crystals was investigated using …

The stabilization by vacuum annealing of tungsten carbide/p-diamond Schottky barrier
diodes (SBDs) has been investigated. The Schottky barrier height (ϕ B) and ideality factor …

A review of diamond–metal contacts is presented with reference to reported values of
interfacial potential (Schottky) barriers and their dependence on macroscopic and …

Three different procedures are used to deposit aluminium onto O‐terminated (100) and
(111) boron‐doped diamond, with the aim of producing a thermally stable surface with low …

We evaluate the current–voltage (I–V) and temperature-dependent I–V characteristics of p+-
Si/p-diamond heterojunction diodes (HDs) fabricated using surface-activated bonding and …

High-resolution Laplace deep-level transient spectroscopy (LDLTS) and thermal admittance
spectroscopy (TAS) have been used to determine the effect of boron (B) concentration on …