Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

A Yan, C Wang, J Yan, Z Wang, E Zhang… - Advanced Functional …, 2024 - Wiley Online Library
High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become
increasingly necessary to meet the emerging demands such as healthcare, edge computing …

Monolithic 3D integration as a pathway to energy-efficient computing and beyond: From materials and devices to architectures and chips

Y Fan, R An, J Tang, Y Li, T Liu, B Gao, H Qian… - Current Opinion in Solid …, 2024 - Elsevier
As emerging technologies like artificial intelligence (AI) and big data continue to evolve, the
demand for high-performance computing (HPC) has been increasing, driving the …

Capacitorless Dynamic Random Access Memory with 2D Transistors by One-Step Transfer of van der Waals Dielectrics and Electrodes

J Guo, Z Lin, X Che, C Wang, T Wan, J Yan, Y Zhu… - ACS …, 2025 - ACS Publications
Dynamic random access memory (DRAM) has been a cornerstone of modern computing,
but it faces challenges as technology scales down, particularly due to the mismatch between …

High Performance Indium–Tin–Oxide Schottky Diodes for Terahertz Band Operation

K Han, Y Kang, YH Tu, C Wu, C Wang, L Liu… - Nano Letters, 2024 - ACS Publications
Schottky diode, capable of ultrahigh frequency operation, plays a critical role in modern
communication systems. To develop cost-effective and widely applicable high-speed …

Co-designed capacitive coupling-immune sensing scheme for indium-tin-oxide (ITO) 2T gain cell operating at positive voltage below 2 V

K Toprasertpong, S Liu, J Chen… - … IEEE Symposium on …, 2023 - ieeexplore.ieee.org
Co-designing materials, devices, and the operating scheme, we demonstrate a 2T memory
gain cell based on ITO, with excellent properties: 1) zero-volt standby with long retention …

Oxide and 2D TMD semiconductors for 3D DRAM cell transistors

JS Hur, S Lee, J Moon, HG Jung, J Jeon… - Nanoscale …, 2024 - pubs.rsc.org
As the scaling of conventional dynamic random-access memory (DRAM) has reached its
limits, 3D DRAM has been proposed as a next-generation DRAM cell architecture. However …

Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors

B Luo, C Zhang, W Meng, W Xiong, M Yang… - …, 2024 - iopscience.iop.org
Sn-doped indium oxide (ITO) semiconductor nano-films are fabricated by plasma-enhanced
atomic layer deposition using trimethylindium (TMIn), tetrakis (dimethylamino) tin (TDMASn) …

Solution-based surface modification method for high-performance ZnO transistors

Q Wang, J Dong, J Lin, D Han, X Zhang - Applied Surface Science, 2025 - Elsevier
A solution-based surface modification method is first proposed for improving electrical
performance of the ZnO transistors. The ZnO transistors are infiltrated for treatment in the …

Enhanced stability in InSnO transistors via ultrathin in-situ AlOx passivation

J Li, Y Chen, Q Gao, T Cao, J Ma, D Li, L Zheng… - Applied Surface …, 2024 - Elsevier
In this study, we present the impact of an ultrathin in-situ AlO x passivation layer on the
electrical performance and stability of InSnO (ITO) transistors. Devices incorporating an …

ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAM

JM Park, S Lee, J Lee, JY Kwon - ACS omega, 2024 - ACS Publications
We developed a two-transistor, zero-capacitor (2T0C) gain-cell memory featuring a self-
aligned top-gate-structured thin-film transistor (TFT) for the first time. The proposed indium …