The giant magnetoresistance (GMR) effect is a very basic phenomenon that occurs in
magnetic materials ranging from nanoparticles over multilayered thin films to permanent …

Magneto-as well as ffexible electronics have emerged as two of the most rapidly developing
technologies of the 21st century. Low processing costs and mechanical stretchability render …

Electronics of tomorrow will be flexible, stretchable, light-weighted, wearable, and even
implantable. Here, we fabricated stretchable spin-valve magnetic field sensors on the …

Strain engineering combined with standard top-down techniques is shown to be eligible to
fabricate compact three dimensional architectures based on rolled-up Co/Cu …

An increase in spin imbalance induced by magnetic sublattice disorder within rare-earth
(RE) metals can in turn increase the exchange bias coupling at the interfaces of RE–RE …

Compact rolled-up Co–Cu nanomembranes of high quality with different numbers of
windings are realized by strain engineering. A profound analysis of magnetoresistance (MR) …

The magnetization reversal in [Ir 20 Mn 80∕ Co 80 Fe 20] 10 exchange-biased multilayers
is studied by specular reflection and off-specular scattering of polarized neutrons. The …

The development of growth techniques aimed at the fabrication of nanoscale
heterostructures with layers of ferroic 3d metals on semiconductor substrates is very …

Semiconductor quantum dot (QD) arrays can be useful for optical devices such as lasers,
solar cells and light-emitting diodes. As the size distribution influences the band-gap, it is …

The spin dependent electron transport in giant magnetoresistive (GMR) multilayers is
significantly affected by the atomic scale structure of their interfaces. Devices with atomically …