Carat–a reliability analysis framework for bti-hcd aging in circuits

P Gholve, P Chatterjee, C Pasupuleti, H Amrouch… - Solid-State …, 2023 - Elsevier
Abstract Circuit Aging Reliability Analysis Tool (CARAT), a framework that calculates
random activity (frequency and duty) aware degradation of FETs to simulate circuit aging …

Aging-aware voltage scaling

VM Van Santen, H Amrouch, N Parihar… - … , Automation & Test …, 2016 - ieeexplore.ieee.org
As feature sizes of transistors began to approach atomic levels, aging effects have become
one of major concerns when it comes to reliability. Recently, aging effects have become a …

Aging-aware boosting

H Khdr, H Amrouch, J Henkel - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
DVFS-based boosting techniques have been widely employed by commercial multi-core
processors, due to their superiority in improving the performance. Boosting, however, is …

Digital circuit performance estimation under PVT and aging effects

MA Scarpato - 2017 - theses.hal.science
The continuous scaling of transistor dimensions has increased the sensitivity of digital
circuits to PVT variations and, more recently, to aging effects such as BTI and HCI. Large …

Hot carrier degradation in cryo-CMOS

W Chakraborty, U Sharma, S Datta… - 2020 IEEE …, 2020 - ieeexplore.ieee.org
28nm Gate First High-K Metal Gate (GF-HKMG) technology is analyzed for Hot-Carrier
Degradation (HCD) under varying gate/drain (VG/VD) bias and temperature (T: 300K to …

A revolving reference odometer circuit for BTI-induced frequency fluctuation measurements under fast DVFS transients

S Satapathy, WH Choi, X Wang… - 2015 IEEE International …, 2015 - ieeexplore.ieee.org
Bias Temperature Instability (BTI) under sub-microsecond DVFS transients manifests as
instantaneous frequency degradation and recovery that has been predicted in past literature …

A cycle-by-cycle HCD and BTI compact model to calculate FinFET based RO ageing using SPICE

U Sharma, C Pasupuleti, N Gangwar… - 2020 4th IEEE …, 2020 - ieeexplore.ieee.org
A SPICE compatible compact model is proposed for the time kinetics of threshold voltage
shift (ΔV_T) due to Hot Carrier Degradation (HCD) and Bias Temperature Instability (BTI) …

Dynamic guardband selection: Thermal-aware optimization for unreliable multi-core systems

H Khdr, H Amrouch, J Henkel - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Circuit aging has become the major reliability concern in current and upcoming technology
nodes. For instance, Bias Temperature Instability (BTI) leads to an increase in the threshold …

[PDF][PDF] Degradation Models and Optimizations for CMOS Circuits

V Van Santen - 2023 - core.ac.uk
Die Gewährleistung der Zuverlässigkeit von CMOS-Schaltungen ist derzeit eines der
größten Herausforderungen beim Chip-und Schaltungsentwurf. Mit dem Ende der Dennard …

[PDF][PDF] Resource Management for Multicores to Optimize Performance under Temperature and Aging Constraints

H Khdr - 2019 - core.ac.uk
Driven by the ever-increasing performance demand, multicore processors have emerged
enabling concurrent computations on a single chip. A multicore processor can be exploited …