The localization behavior of a two-dimensional electron gas confined at the surface of a
heavily doped semiconductor under conditions of the “natural” size effect in the space …

The inherent inhomogeneity of potential on the doped-semiconductor surface during the
formation of equilibrium diffusion distribution for an electroactive impurity in the space …

Processes occurring in the near-surface region of semiconductor photocathodes based on
an epitaxial multilayer GaAsP structure activated by a CsO monolayer have been …

A typical process for forming the GaAs boundary section with any material begins with the
preparation of a plate surface. It must be cleaned of foreign pollutants in accordance with the …

The dependence of native potential inhomogeneities on spatial dispersion of the dielectric
response of the two-dimensional electron gas at the surface of a heavily doped …

The possibility of varying the parameters of electrostatic chaotic potential on a
semiconductor surface with the association of point defects is investigated. Two models of …

Рассмотрено рассеяние электронов малых и промежуточных энергий в
приповерхностной области полупроводникового кристалла с учетом естественных …

Целью представленной работы является экспериментальное и теоретическое
исследование процессов, протекающих в приповерхностной области …