When the integrated circuit (IC) feature size is reduced to 0.13 μm and below, copper (Cu)
becomes the new wiring material in interconnect materials. The double damascene process …

By describing studies of three prototypical surfactants with similar hydrophobic tails but
differently charged headgroups, this review provides a summary of the rich phase behavior …

In this work, we have designed copper chemical mechanical planarization (CMP)
experiments to investigate the effect of slurry components on the planarization performance …

Copper interconnects for the sub-22 nm technology nodes are designed to have diffusion
barriers/liners of significantly reduced thickness and unconventional materials. The …

Copper (Cu), during the chemical mechanical polishing (CMP) of barrier layer, was
associated with several challenges, one of which is to screen slurries required to address …

4 Triazole (TAZ), N-lauroylsarcosine sodium salt (NLS) and potassium oleate (PO) were
tested as passivating additives to previously developed H 2 O 2 and citric acid-based silica …

A specific challenge for integrating Ru as barrier in Cu interconnect structures is the galvanic
corrosion of Cu that occurs during chemical mechanical planarization (CMP). The present …

We report improved planarization efficiency (ratio of step height reduction and removed
layer thickness) in chemical–mechanical planarization (CMP) of copper lines at a down …

Cobalt has been applied as liners in current Cu interconnect and even as interconnect
conductors in next-generation interconnect. In this work, effects of corrosion inhibitors 1, 2, 4 …

Ruthenium will be integrated into copper interconnects as a barrier layer in the near future.
During the chemical mechanical polishing process of the ruthenium barrier layer, copper …