Transport in two-dimensional topological materials: recent developments in experiment and theory

D Culcer, AC Keser, Y Li, G Tkachov - 2D Materials, 2020 - iopscience.iop.org
We review theoretical and experimental highlights in transport in two-dimensional
topological materials over the last five years. Topological materials comprise topological …

Helical liquids in semiconductors

CH Hsu, P Stano, J Klinovaja… - … Science and Technology, 2021 - iopscience.iop.org
One-dimensional helical liquids can appear at boundaries of certain condensed matter
systems. Two prime examples are the edge of a quantum spin Hall insulator and the hinge …

[HTML][HTML] Topological materials by molecular beam epitaxy

M Brahlek, J Lapano, JS Lee - Journal of Applied Physics, 2020 - pubs.aip.org
Topology appears across condensed matter physics to describe a wide array of phenomena
which could alter, augment, or fundamentally change the functionality of many technologies …

High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport

C Thomas, AT Hatke, A Tuaz, R Kallaher, T Wu… - Physical Review …, 2018 - APS
High mobility, strong spin-orbit coupling, and large Landé g factor make the two-dimensional
electron gas (2DEG) in InAs quantum wells grown on nearly lattice-matched GaSb …

First-principles feasibility assessment of a topological insulator at the InAs/GaSb interface

S Yang, D Dardzinski, A Hwang, DI Pikulin… - Physical Review …, 2021 - APS
First-principles simulations are conducted to shed light on the question of whether a two-
dimensional topological insulator (2DTI) phase may be obtained at the interface between …

Anomalous Quantum Oscillations of Interacting Electron-Hole Gases in Inverted Type-II Quantum Wells

D Xiao, CX Liu, N Samarth, LH Hu - Physical review letters, 2019 - APS
We report magnetotransport studies of InAs/GaSb bilayer quantum wells in a regime where
the interlayer tunneling between the electron and hole gases is suppressed. When the …

Energy gap tuning and gate-controlled topological phase transition in composite quantum wells

H Irie, T Akiho, F Couëdo, K Suzuki, K Onomitsu… - Physical Review …, 2020 - APS
We report transport measurements of strained InAs/In x Ga 1− x Sb composite quantum
wells (CQWs) in the quantum spin Hall phase, focusing on the control of the energy gap …

Full potential study of the structural, electronic and optical properties of (InAs) m/(GaSb) n superlattices

M Caid, D Rached, O Cheref, H Righi, H Rached… - Computational …, 2019 - Elsevier
In this paper, we conducted a theoretical investigation on the structural, electronic and
optical properties of (InAs) m/(GaSb) n superlattices (mn: 1-1, 2-2, 1–3 and 3–1), using the …

Intrinsic point defects and the - and -type dopability of the narrow gap semiconductors GaSb and InSb

J Buckeridge, TD Veal, CRA Catlow, DO Scanlon - Physical Review B, 2019 - APS
The presence of defects in the narrow gap semiconductors GaSb and InSb affects their
dopability and hence applicability for a range of optoelectronic applications. Here, we report …

Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb

L Riney, SK Bac, M Zhukovskyi, T Orlova… - Advanced Materials …, 2024 - Wiley Online Library
The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a
two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can …