Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Ferroelectrics, with their spontaneous switchable electric polarization and strong coupling
between their electrical, mechanical, thermal, and optical responses, provide functionalities …

US8859047B2 - Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
- Google Patents US8859047B2 - Use of ruthenium tetroxide as a precursor and reactant for …

Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide
thin films with nanoscale thickness control. Most successful industrial applications have …

The review focuses on ALD precursors of selected elements such as alkaline earth (Mg, Ca,
Sr, Ba), group 4 metals, bismuth, silver, iridium, selenium, tellurium and antimony. These …

This feature article provides a progress review of atomic layer deposition (ALD) for
fabrication of oxide-ion as well as proton conducting ceramic fuel cells. A comprehensive …

Perovskites exhibit a wide range of remarkable material properties that have the potential to
advance various scientific fields. These properties originate in their unique structure and …

Ferroelectrics materials have been tremendously attractive since the 40 s with the discovery
of ferroelectricity in metal oxide perovskite materials and more precisely in barium titanate …

One field of organometallic and materials chemistry that has seen great advancements over
the last 20 years is that of atomic layer deposition (ALD), and in particular the development …

Solid oxide fuel cells (SOFCs) are promising candidates for next-generation energy
conversion devices, and much effort has been made to lower their operating temperature for …