Etching-free pixel definition in InGaN green micro-LEDs

Z Liu, Y Lu, H Cao, GI Maciel Garcia, T Liu… - Light: Science & …, 2024 - nature.com
The traditional plasma etching process for defining micro-LED pixels could lead to
significant sidewall damage. Defects near sidewall regions act as non-radiative …

Exploring the Influence of Localized Surface Plasmon and Sol–Gel Passivation on Blue InGaN/GaN Micro/Nano Light Emitting Diodes

YH Cho, S Baek, PK Jang, J Park, S Kim, T Kim… - ACS …, 2024 - ACS Publications
Micro light-emitting diodes (μLEDs) and nano LEDs (nLEDs) are attracting considerable
interest as potential candidates for next-generation displays. However, both μLEDs and …

Temperature-Induced Stress Performance of High-Density GaN Micro-LED Arrays for Industrial Mass Production

EJ Youn, TK Kim, ABMH Islam, J Kim… - ACS Applied …, 2024 - ACS Publications
The high-temperature-induced stress performance of GaN-based blue micro light emitting-
diode (micro-LED) arrays with a pixel size of 5× 5 μm2 (6 μm pitch) is studied, and …

Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs

N Roccato, F Piva, M Buffolo, C De Santi… - Journal of Physics D …, 2024 - iopscience.iop.org
We investigate the degradation mechanisms of In 0.2 Ga 0.8 N/GaN light emitting diodes
through combined experimental analysis and simulations. The devices were submitted to …

Temperature-dependent efficiency droop in GaN-based blue micro light-emitting diodes

ABMH Islam, TK Kim, YJ Cha, DS Shin… - ECS Journal of Solid …, 2023 - iopscience.iop.org
This work investigates the size-dependent decrease in external quantum efficiency (EQE) of
various InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diodes (μ …

[HTML][HTML] A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors

YR Ryu, SK Hong, EF Schubert, DM Jeon, DS Shin… - AIP Advances, 2024 - pubs.aip.org
We have developed a light-emitting device, called the ZOGAN light-emitting diode (LED).
The ZOGAN LED is formed with the p-layer composed of both ZnO-based oxide and GaN …

Determining the Turn-On Voltage of GaN-Based Light-Emitting Diodes: From Near-Ultraviolet to Green Spectra

ABMH Islam, DS Shin, JS Kwak… - ECS Journal of Solid …, 2023 - iopscience.iop.org
This work investigates the turn-on voltage (V on) estimation methods from experimental data
of InGaN-based multiple-quantum-well light-emitting diodes (LEDs) with emission spectra …

III-V Heterostructure Grown on 300mm Ge/Si Wafer for Large-Scale Fabrication of Red μ-LEDs

P Gaillard, A Ndiaye, BB Bakir… - IEEE Photonics …, 2022 - ieeexplore.ieee.org
We report on the design, fabrication and characterization of red-LEDs directly grown on
large-scale silicon wafers through a superior-quality Ge buffer. 300mm Ge/Si substrates with …

[PDF][PDF] Determining the Turn-On Voltage of GaN-Based Light-Emitting Diodes: From Near-Ultraviolet to Green Spectra

S Maksong, T Yemor, S Yanmanee, A Kono, M Tokito… - 2023 - researchgate.net
This work investigates the turn-on voltage (Von) estimation methods from experimental data
of InGaN-based multiple-quantumwell light-emitting diodes (LEDs) with emission spectra …

Développement de LEDs rouges en matériaux III-V (type GaAs) directement épitaxié sur silicium 300mm

P Gaillard - 2023 - theses.hal.science
Ce travail de thèse présente le développement de diodes électroluminescentes (LEDs)
rouges à base de matériaux III-V (arséniures et phosphures de gallium) directement …