Heat conduction from transistors and interconnects is a critical design consideration for
computing below the 20-nm milestone. This paper reviews detailed heat generation and …

Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts
device performance and reliability. Under nominal operating conditions, a hot-spot in the …

Energy levels due to intrinsic point defects are identified by deep-level transient
spectroscopy (DLTS). Electron-beam (EB) irradiation created nitrogen vacancies (VN) and …

A theoretical model is developed for electron velocity saturation in high power GaN
transistors. It is shown that electron velocity at high electric fields is reduced due to heating …

Electro-optical modulation of a terahertz beam by drifting space-charge domains in n-GaN
epilayers under pulsed electric field excitation was found and investigated at a temperature …

This book systematically introduces physical characteristics and implementations of III-
nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on …

This paper presents an improved negative differential mobility model for GaN and AlGaN to
simulate GaN Gunn diodes at terahertz frequencies. Temperature-dependent parameters v …

Hot-electron transport was probed by nanosecond-pulsed measurements for a nominally
undoped two-dimensional channel confined in a nearly lattice-matched Al 0.82 In 0.18 …

Hot-electron energy relaxation time is deduced for Ga-doped ZnO epitaxial layers from
pulsed hot-electron noise measurements at room temperature. The relaxation time …

The n-type GaN epilayers with low electron density were developed on a native substrate
using the metalorganic vapour phase epitaxy method and investigated under pulsed electric …