The structural, electrical and optical properties of epitaxial semiconductor layers, delta-
doped with impurity atoms, are reviewed. The majority of the discussion relates to GaAs, the …

The oscillatory magnetoresistance of a two-dimensional electron system with two occupied
subbands has been studied in an Al 0.3 Ga 0.7 A s/G a A s heterojunction and an Al 0.3 Ga …

The intersubband transitions in square and parabolic quantum wells under simultaneous
action of the hydrostatic pressure and high-frequency laser field have been investigated. We …

In this article, δ-doping of III–V semiconductors (III–Vs) grown by metal organic vapour
phase epitaxy (MOVPE) is reviewed in respect to the parametric dependencies of δ-doping …

We report the observation of the well-width dependence of the two-dimensional (2D) warm-
electron power loss in GaAs/Ga 1− x Al x As quantum wells. Electron-energy-loss rates via …

The electron transport properties in δ-doped semiconductor systems are studied. The
subband electronic structure of the δ-doped system is obtained by solving the coupled …

The electrical resistivity of Bi-doped Pb 1− x Eu x Te epitaxial layers with electron
concentration n≈ 2× 10 17 cm− 3 is studied as a function of temperature, magnetic field …

We have used secondary ion mass spectrometry, local vibrational mode infrared absorption,
and electrical characterization to study the incorporation of Si delta‐doped planes in GaAs …

In the last 2 decades a large amount of work has been published on the impurity scattering
mechanism and electron transport properties in quasi-two-dimensional (Q2D) …

Measurements are reported on the electrical and optical properties of a series of GaAs/Al
0.33 Ga 0.67 As quantum well structures in which a Si delta-doped plane has been placed …