The use of photo-induced current transients as a means for the detection of deep trapping
levels in high-resistivity bulk materials and for the determination of their parameters is …

The deep levels present in semiconducting CdTe and semi-insulating CdTe: Cl and Cd 0.8
Zn 0.2 Te have been investigated by means of cathodoluminescence, deep level transient …

Carrier lifetime in photoelectric processes is the average time an excited carrier is free
before recombining or trapping. Lifetime is directly related to defects and it is a key …

An experimental arrangement is described by which emission coefficient behavior
associated with deep‐level traps in semi‐insulating GaAs can be surveyed, from the …

For pt. I see ibid., vol. 19, p. 57 (1986). The aim of the paper is to describe the principles and
the features of several signal processing methods suitable for exponential photocurrent …

We have investigated the electrical and optical properties of the deep levels responsible for
the 1.4–1.5 eV luminescence band usually observed in II–VI compounds. We compared the …

The chalcohalide compound Tl6SeI4 is a promising wide-bandgap semiconductor for
efficient hard radiation detection at room temperature due to its high density, average atomic …

We show that photo‐induced current transients in semi‐insulating GaAs are well fitted by a
unique sum of exponentials including the anomalous case, in which one of the exponentials …

The contactless electrical characterization techniques MDP and MD‐PICTS will be
presented in this paper. Both methods are predestined for defect investigation in a variety of …

Thin films of cuprous oxide have been electrodeposited on molybdenum substrates. Some
preliminary photoelectrical properties of two devices with semitransparent aluminum and …