In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high …
In-situ stress evolution as a function of thickness has been investigated and correlated with
the structural properties and surface morphology of GaN buffer layer grown on …
the structural properties and surface morphology of GaN buffer layer grown on …
Growth of compressively‐strained GaN films on Si (111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers
L Pan, X Dong, J Ni, Z Li, Q Yang… - physica status solidi …, 2016 - Wiley Online Library
In this paper, crack‐free GaN films with step‐graded AlGaN transition layer and AlGaN
superlattice layer as buffer layers were grown on Si (111) substrate by metal‐organic …
superlattice layer as buffer layers were grown on Si (111) substrate by metal‐organic …
Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si (111)
The effect of strain states of AlN/GaN-stress mitigating layer (SML) on buried crack density
and its subsequent influence on the residual stresses in GaN buffer layers grown using …
and its subsequent influence on the residual stresses in GaN buffer layers grown using …
Studies on GaN based HEMT heterostructures on 100-mm silicon grown by molecular beam epitaxy
R Lingaparthi - 2014 - dr.ntu.edu.sg
GaN based high electron mobility transistors (HEMTs) have attracted great attention over the
last two decades for the high power and high frequency applications due to their advantages …
last two decades for the high power and high frequency applications due to their advantages …