A thorough discussion of the various features of the photoluminescence spectra of undoped,
p‐doped and n‐doped Al x Ga1− x As (0≤ x≤ 1) alloys is given. This review covers spectral …

Thermalization, intervalley scattering, and cooling of photoexcited carriers are observed in
the indirect-band-gap semiconductor Ge through time-resolved direct-band-gap …

Sumário Estas são notas de aula preparadas para um curso de quatro horas e meia na VII
Escola Jorge André Swieca de Óptica Quântica e Não Linear. Apresentamos uma revisão …

We report resonant pump and white probe femtosecond spectroscopy in the Al0. 42Ga0.
58As multivalley semiconductor. For this alloy composition the energy valleys are near the Γ …

We present a model calculation capable of investigating the dynamics of photoexcited
carriers in the Al0. 48Ga0. 52As indirect gap semiconductor. Nearly resonant excitation at …

Alloy semiconductor structures are important in bandgap engineered devices because of the
tunability of the bandgap and lattice constant. Transport in such alloys is inherently affected …