We report high output power and high-gain semiconductor optical amplifiers integrated on a
heterogeneous silicon/III-V photonics platform. The devices produce 25 dB of unsaturated …

Over the last few decades, research works have focused on elucidating the optical
properties of semiconductor materials. Despite remarkable progress in the measurement …

Silicon (Si)-based mid-infrared (MIR) photonics has promising potential for realizing next-
generation ultra-compact spectroscopic systems for various applications such as label-free …

1064 nm six-junction laser power converters (LPCs) with InGaAsP absorption layers are
designed and fabricated. IV characteristics of the LPCs with an aperture of 8.32 mm 2 are …

Lattice-mismatched InGaAs has appeared to be emerging semiconductor materials for
sensors and photovoltaic applications. The absorption coefficients of the materials are …

We propose and demonstrate a novel device structure of resonant cavity-enhanced
photodetector (RCE-PD). The new RCE-PD structure consists of a bottom distributed Bragg …

Theoretical models used for the determination of the refractive index of In X Ga 1− X As are
reviewed and compared. Attention is drawn to some problems experienced with some of the …

The 4.2% mismatch at the Si/Ge interface has a significant impact on Si/Ge photodetectors.
However, few researchers have attempted to determine the major noise source or study the …

We report direct measurements of the optical gain on vertical-cavity surface-emitting laser
(VCSEL) material using a stripe-length method featuring segmented contacts. We utilise the …

The thickness detection of quantum well has always been the research focus, especially for
In x Ga 1-x As-based indium-rich cluster (IRC) structure, which has a thickness fluctuation of …