We review prior and on-going works in using laser annealing (LA) techniques in the
development of chalcogenide-based [CdTe and Cu (In, Ga)(S, Se) 2] solar cells. LA can …

A thin film of SnS 2 obtained by close-spaced vacuum sublimation was irradiated by an Nd:
YAG laser (λ= 532 nm) using two intensities of laser radiation of 8.5 MW/cm 2 and 11.5 …

Abstract Ba 0.6 Sr 0.4 TiO 3, Ce-doped Ba 0.6 Sr 0.4 TiO 3, Mn-doped Ba 0.6 Sr 0.4 TiO
3,(Ce, Mn) co-doped Ba 0.6 Sr 0.4 TiO 3 (abbreviated as BST, BSTCe, BSTMn, BSTCeMn) …

In this work, thin films of Cu 2 ZnSnS 4 (CZTS) were grown by spray-pyrolysis method and
were irradiated by pulsed Nd: YAG laser. Their morphological, chemical, structural and …

The quality control of individual semiconductor thin films during fabrication of multiple layers
is important for industry and academia. The ultimate aim of this research is to predict the …

One industrially relevant fabrication method for CuInSe 2 absorber layers begins with
electrodeposition, which is highly resource efficient and easily up-scalable, followed by a …

Quantum dots of I–III–VI ternary compounds exhibit unusual photophysical properties and
technological utility, which attract attention and have been intensely investigated. CuInSe 2 …

Printed chalcopyrite thin films have attracted considerable attention in recent years due to
their potential in the high-throughput production of photovoltaic devices. To improve the …

Rapid laser annealing of a Cu (In, Ga) Se 2 (CIGS) thin film absorber was proposed and
demonstrated using a continuous 532-nm Nd: YAG laser, following sputtering with Cu 0.9 In …

Global energy crisis is one of the major concerns of the humankind due to the limited
availability of fossil fuels which accomplish dominant portion of present days‟ energy …