Flexible and stretchable organic electrochemical transistors for physiological sensing devices

Y Yao, W Huang, J Chen, X Liu, L Bai… - Advanced …, 2023 - Wiley Online Library
Flexible and stretchable bioelectronics provides a biocompatible interface between
electronics and biological systems and has received tremendous attention for in situ …

Giant negative thermopower of ionic hydrogel by synergistic coordination and hydration interactions

B Chen, Q Chen, S Xiao, J Feng, X Zhang, T Wang - Science advances, 2021 - science.org
The design of ultrasensitive ionic thermopiles is important for low-grade heat collection and
temperature sensing. However, high-quality ionic thermoelectric materials with negative …

[HTML][HTML] Synchrotron-based infrared microspectroscopy under high pressure: An introduction

L Kong, G Liu - Matter and Radiation at Extremes, 2021 - pubs.aip.org
Synchrotron sources with high photon flux, small source size, and broad energy range have
revolutionized ultrafine characterization of condensed matter. With the addition of the …

Flexible complementary circuits operating at sub-0.5 V via hybrid organic–inorganic electrolyte-gated transistors

Y Yao, W Huang, J Chen, G Wang… - Proceedings of the …, 2021 - National Acad Sciences
Electrolyte-gated transistors (EGTs) hold great promise for next-generation printed logic
circuitry, biocompatible integrated sensors, and neuromorphic devices. However, EGT …

Popular strategies for constructing polymer gel thermoelectric materials

X Sun, A Lu - Journal of Polymer Science, 2024 - Wiley Online Library
Polymeric thermoelectric materials utilizing the Soret effect have the advantages of high
Seebeck coefficient, non‐toxicity, light weight, and excellent mechanical properties that …

Multiple effects of hydrogen on InGaZnO thin-film transistor and the hydrogenation-resistibility enhancement

W Pan, Y Wang, Y Wang, Z Xia, FSY Yeung… - Journal of Alloys and …, 2023 - Elsevier
As the most common external dopant of amorphous oxide semiconductors (AOSs), the
hydrogen (H) exhibits great influences on the performance of AOS thin-film transistors (TFTs) …

Effects of Al2O3 surface passivation on the radiation hardness of IGTO thin films for thin-film transistor applications

SH Hwang, K Yatsu, DH Lee, IJ Park, HI Kwon - Applied Surface Science, 2022 - Elsevier
In this study, we examined the effects of aluminum oxide (Al 2 O 3) surface passivation on
the radiation damage of indium-gallium-tin oxide (IGTO) thin films and radiation hardness of …

Influence of incorporation of gallium oxide nanoparticles on the structural and optical properties of polyvinyl alcohol polymer

AM Abd-Elnaiem, TA Hamdalla, SM Seleim… - Journal of Inorganic and …, 2021 - Springer
In the present work, gallium oxide nanoparticles (nGa2O3) are synthesized via the thermal
microwave combustion method, while nanocomposites of polyvinyl alcohol (PVA) polymer …

Rational design of hydrogen and nitrogen co-doped ZnO for high performance thin-film transistors

A Abliz, X Xue, X Liu, G Li, L Tang - Applied Physics Letters, 2021 - pubs.aip.org
This work investigates the effect of nitrogen and hydrogen (N/H) co-doping on the
performance of ZnO thin-film transistors (TFTs). Optimum N/H co-doped ZnO TFTs showed …

[HTML][HTML] Origin of high carrier concentration in amorphous wide-bandgap oxides: Role of disorder in defect formation and electron localization in In2O3− x

JE Medvedeva, IA Zhuravlev, C Burris… - Journal of Applied …, 2020 - pubs.aip.org
Structural disorder has been known to suppress carrier concentration and carrier mobility in
common covalent semiconductors, such as silicon, by orders of magnitude. This is expected …