The use of photo-induced current transients as a means for the detection of deep trapping
levels in high-resistivity bulk materials and for the determination of their parameters is …

The deep levels present in semiconducting CdTe and semi-insulating CdTe: Cl and Cd 0.8
Zn 0.2 Te have been investigated by means of cathodoluminescence, deep level transient …

In the search for nontoxic alternatives to lead‐halide perovskites, bismuth oxyiodide (BiOI)
has emerged as a promising contender. BiOI is air‐stable for over three months …

An experimental arrangement is described by which emission coefficient behavior
associated with deep‐level traps in semi‐insulating GaAs can be surveyed, from the …

For pt. I see ibid., vol. 19, p. 57 (1986). The aim of the paper is to describe the principles and
the features of several signal processing methods suitable for exponential photocurrent …

The properties ofa deep electron trapping center found in Si-doped Iflo. sl Gao. 49_xA1xP
(x= 0.24) grown on Si-doped GaAs (100) substrates using molecular-beam epitaxy are …

Thin films of cuprous oxide have been electrodeposited on molybdenum substrates. Some
preliminary photoelectrical properties of two devices with semitransparent aluminum and …

Unusual behavior of pyroelectric current signal polarity near the Curie point (T c) was
observed for TlGaSe 2 a ferroelectric-semiconductor. It has been revealed that the polarity of …

An intelligent measurement system for the characterisation of defect centres in semi-
insulating materials is presented. The system utilises two-dimensional analysis of the …

The pressure and temperature phase diagrams of DPPC bilayers have been obtained by
DTA and dilatometry. Under atmospheric pressure DPPC shows three phase transitions at …