Dielectric breakdown of oxide films in electronic devices

A Padovani, P La Torraca, J Strand, L Larcher… - Nature Reviews …, 2024 - nature.com
Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …

[图书][B] Handbook of thin film deposition techniques principles, methods, equipment and applications, second editon

K Seshan - 2002 - taylorfrancis.com
The Handbook of Thin Film Deposition Techniques: Principles, Methods, Equipment and
Applications, Second Edition explores the technology behind the spectacular growth in the …

Growth and characterization of single crystal insulators on silicon

LJ Schowalter, RW Fathauer - Critical Reviews in Solid State and …, 1989 - Taylor & Francis
Epitaxial insulators have a number of potential applications in the semiconductor industry.
These include semiconductor-on-insulator (SOI) structures, three-dimensional (3-D) and/or …

Electronic structure of the /Si(111) interface

D Rieger, FJ Himpsel, UO Karlsson, FR McFeely… - Physical Review B, 1986 - APS
High-resolution core-level and Auger-electron spectroscopy, polarization-dependent near-
edge x-ray absorption, and angle-resolved photoemission are used to study the electronic …

Fundamental issues in heteroepitaxy—A department of energy, council on materials science panel report

EG Bauer, BW Dodson, DJ Ehrlich… - Journal of Materials …, 1990 - cambridge.org
accepted 11 January 1990) During the past decade, nonequilibrium techniques have been
developed for the growth of epitaxial semiconductors, insulators, and metals which have led …

Substrate controlled hydrophobicity of the Y2O3 films

J Borowiec, L Li, FS Boi, CJ Carmalt… - Colloids and Surfaces A …, 2024 - Elsevier
The development of hydrophobic surfaces is an important factor for clean energy production
from solar arrays, enabling their operation at the highest possible efficiencies for the longest …

Photoemission study of bonding at the -on-Si(111) interface

MA Olmstead, RIG Uhrberg, RD Bringans… - Physical Review B, 1987 - APS
The bonding at the interface between calcium fluoride and the silicon (111) surface has
been studied with surface-sensitive core-level photoemission spectroscopy. The interface is …

Epitaxial Al2O3 films on Si by low‐pressure chemical vapor deposition

M Ishida, I Katakabe, T Nakamura, N Ohtake - Applied physics letters, 1988 - pubs.aip.org
Heteroepitaxial Al2O3 films were grown successfully on (100) Si substrates at substrate
temperatures above 1000° C by low‐pressure chemical vapor deposition with the use of N2 …

Epitaxial growth of on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth annealing

JP Liu, P Zaumseil, E Bugiel, HJ Osten - Applied Physics Letters, 2001 - pubs.aip.org
We demonstrate the epitaxial growth of hexagonal Pr 2 O 3 (001) on Si (111), with x-ray ω-
scan full width at half maximum values as low as 0.06°, which is comparable with Si …

Spectral characterization of mid-infrared Bloch surface waves excited on a truncated 1D photonic crystal

A Occhicone, M Pea, R Polito, V Giliberti… - ACS …, 2020 - ACS Publications
The many fundamental roto-vibrational resonances of chemical compounds result in strong
absorption lines in the mid-infrared region (λ∼ 2–20 μm). For this reason, mid-infrared …