A detailed study of GaN-based planar asymmetric nanodiodes, promising devices for the
fabrication of room temperature THz Gunn oscillators, is reported. By using Monte Carlo …

Planar Gunn diodes based on doped GaN active layers with different geometries have been
fabricated and characterized. Gunn oscillations have not been observed due to the …

In this work, we report on Monte Carlo simulations to study the capability to generate Gunn
oscillations of diodes based on InP and GaN with around 1 μm active region length. We …

The wide bandgap material, Gallium Nitride (GaN), has emerged as the dominant
semiconductor material to implement high-electron mobility transistors (HEMTs) that form the …

The conditions for microwave power generation with hot-electron transport are investigated
in a submicron GaN diode when it operates in the limited space-charge accumulation (LSA) …

By means of Monte Carlo simulations of gallium nitride (GaN) planar Gunn diodes, the
epilayer structure on which they are fabricated is optimized in order to achieve ultrahigh …

The performance and operation of GaN Gunn diodes has been investigated for a number of
device structures and at various temperatures using a three-valley Monte Carlo model …

The existence of leakage current pathways leading to the appearance of impact ionization
and the potential device breakdown in planar Gunn GaN diodes is analyzed by means of a …

The conditions for microwave power generation in a submicrometer GaN diode, with a
relatively lightly doped active channel, coupled to an external resonant circuit are …

Impact ionization originated by the buffer leakage current, together with high electric fields (>
3 MV/cm) at the anode corner of the isolating trenches, has been identified as the failure …