Molecular electronics with carbon nanotubes
P Avouris - Accounts of chemical research, 2002 - ACS Publications
Carbon nanotubes have unique properties that make them a most promising system on
which to base molecular electronics. We briefly review the electrical characteristics of carbon …
which to base molecular electronics. We briefly review the electrical characteristics of carbon …
Elastically strain-sharing nanomembranes: flexible and transferable strained silicon and silicon–germanium alloys
SA Scott, MG Lagally - Journal of Physics D: Applied Physics, 2007 - iopscience.iop.org
The emerging field of strained-Si based nanomembranes is reviewed, including fabrication
techniques, strain-induced band structure engineering, electronic applications and three …
techniques, strain-induced band structure engineering, electronic applications and three …
High performance silicon nanowire field effect transistors
Silicon nanowires can be prepared with single-crystal structures, diameters as small as
several nanometers and controllable hole and electron doping, and thus represent powerful …
several nanometers and controllable hole and electron doping, and thus represent powerful …
Carbon nanotube electronics
We evaluate the potential of carbon nanotubes (CNTs) as the basis for a new nanoelectronic
technology. After briefly reviewing the electronic structure and transport properties of CNTs …
technology. After briefly reviewing the electronic structure and transport properties of CNTs …
[图书][B] Handbook of nanoscience, engineering, and technology
Nanotechnology, science, and engineering spearhead the 21st century revolution that is
leading to fundamental breakthroughs in the way materials, devices, and systems are …
leading to fundamental breakthroughs in the way materials, devices, and systems are …
The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance
T Skotnicki, JA Hutchby, TJ King… - IEEE Circuits and …, 2005 - ieeexplore.ieee.org
The rapid cadence of metal-oxide semiconductor field-effect transistor (MOSFET) scaling, as
seen in the new 2003 International Technology Roadmap for Semiconductors ITRS), is …
seen in the new 2003 International Technology Roadmap for Semiconductors ITRS), is …
No exponential is forever: but" Forever" can be delayed![semiconductor industry]
GE Moore - 2003 IEEE International Solid-State Circuits …, 2003 - ieeexplore.ieee.org
By any measure, the semiconductor industry has experienced fantastic growth over the last
50 years. Starting from nothing, it has now passed $200 billion in annual revenue and has …
50 years. Starting from nothing, it has now passed $200 billion in annual revenue and has …
Multiple-gate SOI MOSFETs: device design guidelines
JT Park, JP Colinge - IEEE transactions on electron devices, 2002 - ieeexplore.ieee.org
This paper describes computer simulations of various SOI MOSFETs with double and triple-
gate structures, as well as gate-all-around devices. The concept of a triple-gate device with …
gate structures, as well as gate-all-around devices. The concept of a triple-gate device with …
High performance fully-depleted tri-gate CMOS transistors
BS Doyle, S Datta, M Doczy, S Hareland… - IEEE Electron …, 2003 - ieeexplore.ieee.org
Fully-depleted (FD) tri-gate CMOS transistors with 60 nm physical gate lengths on SOI
substrates have been fabricated. These devices consist of a top and two side gates on an …
substrates have been fabricated. These devices consist of a top and two side gates on an …
Towards implementation of a nickel silicide process for CMOS technologies
C Lavoie, FM d'Heurle, C Detavernier… - Microelectronic …, 2003 - Elsevier
In this paper, we review some of the advantages and disadvantages of nickel silicide as a
material for the electrical contacts to the source, drain and gate of current and future CMOS …
material for the electrical contacts to the source, drain and gate of current and future CMOS …