Addition of MgO nanoparticles and plasma surface treatment of three-dimensional printed polycaprolactone/hydroxyapatite scaffolds for improving bone regeneration
HS Roh, CM Lee, YH Hwang, MS Kook… - Materials Science and …, 2017 - Elsevier
Magnesium (Mg) plays an important role in the body in mediating cell-extracellular matrix
interactions and controlling bone apatite structure and density. Hydroxyapatite (HAp) has …
interactions and controlling bone apatite structure and density. Hydroxyapatite (HAp) has …
III–V/Ge channel MOS device technologies in nano CMOS era
CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …
promising devices for high-performance and low power advanced LSIs in the future …
In vitro study of 3D PLGA/n-HAp/β-TCP composite scaffolds with etched oxygen plasma surface modification in bone tissue engineering
HS Roh, SC Jung, MS Kook, BH Kim - Applied Surface Science, 2016 - Elsevier
Abstract Three-dimensional (3D) scaffolds have many advantageous properties for bone
tissue engineering application, due to its controllable properties such as pore size, structural …
tissue engineering application, due to its controllable properties such as pore size, structural …
New materials for post-Si computing: Ge and GeSn devices
As Si-transistor technology advances beyond the 10 nm node, the device research
community is increasingly looking into the possibility of replacing Si with novel, high mobility …
community is increasingly looking into the possibility of replacing Si with novel, high mobility …
III-V/Ge MOS device technologies for low power integrated systems
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …
promising devices for high performance and low power integrated systems in the future …
Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies
S Choudhary, M Yogesh, D Schwarz… - Journal of Vacuum …, 2023 - pubs.aip.org
Germanium channel FinFET transistors process integration on a silicon substrate is a
promising candidate to extend the complementary metal–oxide–semiconductor …
promising candidate to extend the complementary metal–oxide–semiconductor …
Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation
R Zhang, X Yu, M Takenaka… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
Mechanisms of the mobility degradation in high normal field (or N) in Ge p-and n-metal-
oxide–semiconductor field-effect transistors (MOSFETs) with plasma postoxidation GeO …
oxide–semiconductor field-effect transistors (MOSFETs) with plasma postoxidation GeO …
The mechanism of improving germanium metal–oxide–semiconductor field-effect transistors' reliability by high-k dielectric and yttrium-doping: From the view of charge …
The application of germanium (Ge)-based transistors has long been restricted by the poor
reliability of the gate dielectrics. One solution proposed in the experiment is capping the …
reliability of the gate dielectrics. One solution proposed in the experiment is capping the …
Ge pMOSFETs with GeOx Passivation Formed by Ozone and Plasma Post Oxidation
A comparison study on electrical performance of Ge pMOSFETs with a GeO x passivation
layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed …
layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed …
Impact of Channel Orientation on Electrical Properties of Ge p- and n-MOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks Fabricated by Plasma Postoxidation
R Zhang, X Yu, M Takenaka… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
The impact of surface orientations on electrical characteristics of Ge pand n-channel
MOSFETs with ultrathin equivalent oxide thickness Al 2 O 3/GeOx/Ge gate-stacks is …
MOSFETs with ultrathin equivalent oxide thickness Al 2 O 3/GeOx/Ge gate-stacks is …