Silicon carbide (SiC) devices are considered as key enablers for the development of highly
efficient and compact dc-dc converters for low-and medium-voltage applications. Besides …

A multiple stage gate driver for SiC MOSFETs based on a switched resistor topology is
introduced and a hardware realization is presented. The measurement setup is shown in …

This paper presents different experimental methods for measuring parasitic capacitances
and inductances of direct copper bond (DBC) based power semiconductor modules. The …

This paper experimentally investigates into the effects of parasitic inductances on the
switching performance of a SiC MOSFET half bridge. As the switching dynamics of wide …

The output capacitance C oss of power semiconductors is highly dependent on the drain-
source voltage. In today's commercially available silicon carbide (SiC) modules an …

Inverter driven machines are a vital part of electrical traction drives. They are subject to high-
frequency parasitic currents, caused by the high-frequency components of the pulse width …

This paper introduces a control hardware platform and suitable current sensors for fast
switching silicon carbide (SiC) dc-dc converters. An overview and detailed analysis of high …

Diese Dissertation entstand im Rahmen meiner Arbeit als wissenschaftlicher Mitarbeiter im
Zeitraum von 2015 bis 2021 am Institut für Stromrichtertechnik und Elektrische Antriebe …

This paper presents the design of a 2 kA pulsed current source. It uses parallel connected
silicon carbid semiconductor devices to provide high current amplitudes and short rise and …