Perspective on ferroelectric devices: lessons from interfacial chemistry
Ferroelectric fluorite-structured oxide thin films have attracted increased interest from both
academia and industry because of their superior scalability─ in which their ferroelectric …
academia and industry because of their superior scalability─ in which their ferroelectric …
Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO2
Investigations on fluorite-structured ferroelectric HfO2/ZrO2 thin films are aiming to achieve
high-performance films required for memory and computing technologies. These films …
high-performance films required for memory and computing technologies. These films …
Transistors with ferroelectric ZrXAl1−XOY crystallized by ZnO growth for multi-level memory and neuromorphic computing
Ferroelectric (FE) field-effect transistors are interesting for their non-destructive readout
characteristic and energy efficiency but are difficult to integrate on silicon platforms. Here, FE …
characteristic and energy efficiency but are difficult to integrate on silicon platforms. Here, FE …
Low Voltage High Polarization by Optimizing Scavenged WNx Interfacial Capping Layer at the Ru/HfxZr1‐xO2 Interface and Evidence of Fatigue Mechanism
A Aich, A Senapati, ZF Lou, YP Chen… - Advanced Materials …, 2024 - Wiley Online Library
In this study, the double remnant polarization (2Pr) is enhanced from≈ 2 to 25 µC cm− 2 at a
low applied voltage of±2 V (or from 10 to 35 µC cm− 2 at a voltage of±4 V) by decreasing the …
low applied voltage of±2 V (or from 10 to 35 µC cm− 2 at a voltage of±4 V) by decreasing the …
Boosting non-volatile memory performance with exhalative annealing: A novel approach to low-temperature crystallization of hafnia based ferroelectric
In this study, we propose a CMOS-compatible exhalative annealing (EA) method that can
significantly reduce the annealing temperature of Zr-doped hafnia-based ferroelectrics …
significantly reduce the annealing temperature of Zr-doped hafnia-based ferroelectrics …
Nanoscale Phase and Orientation Mapping in Multiphase Polycrystalline Hafnium Zirconium Oxide Thin Films Using 4D‐STEM and Automated Diffraction Indexing
Ferroelectric hafnium zirconium oxide (HZO) holds promise for nextgeneration memory and
transistors due to its superior scalability and seamless integration with complementary metal …
transistors due to its superior scalability and seamless integration with complementary metal …
Photoinduced patterning of oxygen vacancies to promote the ferroelectric phase of Hf0. 5Zr0. 5O2
Photoinduced reductions in the oxygen vacancy concentration were leveraged to increase
the ferroelectric phase fraction of Hf 0.5 Zr 0.5 O 2 thin-films. Modest (∼ 2− 77 pJ/cm 2) …
the ferroelectric phase fraction of Hf 0.5 Zr 0.5 O 2 thin-films. Modest (∼ 2− 77 pJ/cm 2) …
Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO2/ZrO2 ferroelectric capacitors towards long endurance and high temperature retention
A novel defect control approach based on laminated HfO 2/ZrO 2 with multifunctional
TiN/Mo/TiO x N y electrode is proposed to significantly improve the endurance and data …
TiN/Mo/TiO x N y electrode is proposed to significantly improve the endurance and data …
Role of Ferroelectric Layer Thickness in Resistive Switching and Depolarization Effects in Hf0.5Zr0.5O2-Based Structures
IA Savichev, IG Margolin, RI Romanov… - IEEE Transactions on …, 2025 - ieeexplore.ieee.org
The development of low-power and high-density ferroelectric memories requires scaling the
thickness of the functional layer. However, the thickness could have a significant impact on …
thickness of the functional layer. However, the thickness could have a significant impact on …
Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor
The explosive growth in data-centric computing driven by artificial intelligence (AI) and big
data has surpassed the capabilities of the traditional von Neumann architecture. The …
data has surpassed the capabilities of the traditional von Neumann architecture. The …