Atomic layer etching (ALE) is a technique for removing thin layers of material using
sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for …

Plasma-induced defects are often recognized in state-of-the-art semiconductors, high-
efficiency solar cells and high-sensitivity image sensors. These defects are in the form of a …

The mechanism for atomic layer etching (ALE) typically consists of two sequential self-
limited half-reactions—passivation and ion bombardment—which provide unique control …

Fluorine cold plasmas produced by an electrical discharge in SF 6, CF 4, CHF 3 or C 4 F 8
gases, principally, have two main fields of application. The first and historical application is …

We present a topographic simulation platform that simultaneously considers 3D surface
movement, neutral and ion transport, and surface reactions in plasma high-aspect-ratio …

A damaged layer remains on silicon substrates after high-aspect-ratio contact (HARC)
etching when using a fluorocarbon gas. Atomic layer etching (ALET) is a technique that can …

A three-dimensional atomic-scale cellular model (ASCeM-3D) has been developed to
reproduce the evolution of feature profiles on atomic or nanometer scale during plasma …

A hybrid model is used to investigate the fragmentation of C 4 F 8 inductive discharges.
Indeed, the resulting reactive species are crucial for the optimization of the Si-based etching …

The flux-energy distribution functions of H+ 3 ions at the electrodes of capacitively coupled
parallel plate discharges operated in a regime of relatively high gas pressures (200–650 Pa) …

Studies of power-modulated chlorine inductively coupled plasmas (ICPs) bounded by yttria-
coated chamber walls are presented. Time-resolved optical emissions from Cl and Xe …