The magnetization and magnetoresistance of Si whiskers doped with< Ni, B> to boron
concentrations corresponding to the metal-insulator transition (2× 10 18 cm− 3÷ 5× 10 18 …

Negative magnetoresistance of InSb whiskers with different impurity concentrations 4.4× 10
16–7.16× 10 17 cm− 3 was studied in longitudinal magnetic field 0–14 T in the temperature …

Temperature dependencies of GaSb whiskers' resistance doped with Te to concentration of
1.7× 10 18 cm− 3 were measured in temperature range 1.5–300 K. At 4.2 K temperature, a …

The results of studies of magnetoresistance for GaAs filamentous crystals doped with
tellurium admixture to a concentration of 2· 1017 сm− 3, in the temperature range 4.2–60 K …

Strain influence on the longitudinal magnetoresistance for the n-type conductivity InSb
whiskers doped by Sn to concentration 6· 10 16–6· 10 17 сm–3 was studied in the …

The transverse magnetoconductance of the n-type conductivity InSb whiskers doped by Sn
to concentration 4.4× 1016÷ 7.16× 1017 cm− 3 were studied in the temperature range 4.2÷ …

The concentration and mobility of electrons were examined by Hall measurements in n-
GaSb whiskers with defect concentration of about 5× 1017 cm–3. The dependences of …

It was studied the electrical magnetoresistance of nickel-and boron-doped filamentary
silicon crystals in which a metal-insulator transition is observed. A giant magnetoresistance …

The spin-resolved electronic structure of doped crystals Si< Ni> and Si< B, Ni> has been
evaluated within the generalized gradient approximation (GGA) framework. The strong …

Tensoresistance at uniaxial pressure for electron-irradiated n-Si single crystals at room
temperature has been studied. Silicon single crystals for research were doped with …