A 24.5–43.5-GHz ultra-compact CMOS receiver front end with calibration-free instantaneous full-band image rejection for multiband 5G massive MIMO
This article presents an extremely broadband 24.5-43.5 GHz receiver (RX) achieving 32-56-
dB instantaneous full-band image rejection (IR), which supports multiple major mm-Wave …
dB instantaneous full-band image rejection (IR), which supports multiple major mm-Wave …
A broadband 22–31-GHz bidirectional image-reject up/down converter module in 28-nm CMOS for 5G communications
F Quadrelli, D Manente, D Seebacher… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article presents a-band bidirectional transceiver front end and its integration in an
image-reject up/down converter module in 28-nm bulk CMOS. In the radio frequency (RF) …
image-reject up/down converter module in 28-nm bulk CMOS. In the radio frequency (RF) …
A near-zero quiescent power breeze wake-up anemometer based on a rolling-bearing triboelectric nanogenerator
Wind sensors have always played an irreplaceable role in environmental information
monitoring and are expected to operate with lower power consumption to extend service …
monitoring and are expected to operate with lower power consumption to extend service …
A 0.45-V Low-Power OOK/FSK RF Receiver in 0.18 CMOS Technology for Implantable Medical Applications
JY Hsieh, YC Huang, PH Kuo… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A 0.45-V low-power 0.18 μm CMOS OOK/FSK RF receiver for implantable medical
applications is proposed. The receiver utilizes a wake-up mechanism to adjust its power …
applications is proposed. The receiver utilizes a wake-up mechanism to adjust its power …
A V-Band Integrated Receiver Front-End Based on 0.15 μm GaAs pHEMT Process for Passive Millimeter-Wave Imaging
J Gong, X Chen, W He, A Altaf, A Hu, J Miao - IEEE Access, 2022 - ieeexplore.ieee.org
The design, analysis, implementation and measurement of an integrated V-band receiver
front-end based on GaAs pHEMT process are presented in this paper. The front-end chip …
front-end based on GaAs pHEMT process are presented in this paper. The front-end chip …
Ka-band calibration-free high image-rejection up/down mixers with 117% fractional IF bandwidth for SATCOM applications
MH Wu, JH Tsai, TW Huang - IEEE Access, 2020 - ieeexplore.ieee.org
This paper presents two Ka-band calibration-free up/down mixers, each with high image
rejection ratio (IRR) for a wide band of IF frequencies covering the satellite modem …
rejection ratio (IRR) for a wide band of IF frequencies covering the satellite modem …
Wide-IF-Band 90-nm CMOS Image-Rejection Subharmonic Radio-Astronomical Array Receiver Design in 75–110 GHz
R Hu, Y Chen, KH Hsieh - IEEE Transactions on Terahertz …, 2022 - ieeexplore.ieee.org
This article reports our latest progress in the design of a broadband 90-nm CMOS image-
rejection subharmonic receiver where its RF covers 75–110 GHz, local oscillator (LO) is 37.5 …
rejection subharmonic receiver where its RF covers 75–110 GHz, local oscillator (LO) is 37.5 …
A V-band SiGe image-reject receiver front-end for atmospheric remote sensing
M Frounchi, C Coen, CDY Cheon… - 2018 IEEE BiCMOS …, 2018 - ieeexplore.ieee.org
This paper presents a V-band receiver front-end for spaceborne atmospheric remote
sensing. The receiver is implemented in a 0.13 μm SiGe BiCMOS technology with fT/fMAX of …
sensing. The receiver is implemented in a 0.13 μm SiGe BiCMOS technology with fT/fMAX of …
A Compensation and Calibration Technique for Lumped Hybrid Couplers in Integrated Image-Reject Architectures
D Manente, F Quadrelli, F Padovan… - … on Circuits and …, 2022 - ieeexplore.ieee.org
This paper presents a compensation and calibration technique for lumped-element Lange
hybrid couplers. The target of the compensation is the reduction of the quadrature error …
hybrid couplers. The target of the compensation is the reduction of the quadrature error …
28 GHz 鏡像訊號抑制接收機設計
KJ Deng - 2022 - search.proquest.com
隨著毫米波頻段的發展, 在毫米波射頻收發器中, 低雜訊放大器及混頻器為射頻收發機的重要的
元件. 由於近年來互補式金氧半導體製程(CMOS) 的發展愈趨前瞻, 近年來一些射頻電路整合成 …
元件. 由於近年來互補式金氧半導體製程(CMOS) 的發展愈趨前瞻, 近年來一些射頻電路整合成 …