Nanoscale effects on the thermal and mechanical properties of AlGaAs/GaAs quantum well laser diodes: influence on the catastrophic optical damage
In this work we study the catastrophic optical damage (COD) of graded-index separate
confinement heterostructure quantum well (QW) laser diodes based on AlGaAs/GaAs. The …
confinement heterostructure quantum well (QW) laser diodes based on AlGaAs/GaAs. The …
Performance and reliability improvement of 905 nm high power laser diode by design, fabrication and characterization of high damage threshold mirrors
A Ghadimi-Mahani, A Goodarzi, E Farsad… - Microelectronics …, 2021 - Elsevier
The performance improvement of 905 nm InGaAs/AlGaAs/GaAs Single Quantum Well
Separate-Confinement Heterostructure Laser Diode (SQW-SCH-LD) in consequence of …
Separate-Confinement Heterostructure Laser Diode (SQW-SCH-LD) in consequence of …
Narrow versus broad waveguide laser diodes: A comparative analysis of self-heating and reliability
Semiconductor Laser Diodes (LDs) generate high output powers with high power
conversion efficiencies. While broad-area LDs are favored for high-power applications …
conversion efficiencies. While broad-area LDs are favored for high-power applications …
Effect of thermal lensing and the micrometric degraded regions on the catastrophic optical damage process of high-power laser diodes
Catastrophic optical damage (COD) is one of the processes limiting the lifetime of high-
power laser diodes. The understanding of this degradation phenomenon is critical to …
power laser diodes. The understanding of this degradation phenomenon is critical to …
[PDF][PDF] 915 nm 半导体激光器新型腔面钝化工艺
王鑫， 朱凌妮， 赵懿昊， 孔金霞， 王翠鸾， 熊聪… - 红外与激光 …, 2019 - researching.cn
针对半导体激光器腔面光学灾变损伤的发生机制, 设计了一种单管芯半导体激光器腔面真空解理
钝化工艺方法. 在真空中解理并且直接对半导体激光器腔面蒸镀钝化膜, 提出用ZnSe …
钝化工艺方法. 在真空中解理并且直接对半导体激光器腔面蒸镀钝化膜, 提出用ZnSe …
[HTML][HTML] Failure mode characterizations of semiconductor lasers
Z Ren, Q Li, B Qiu, J Zhang, X Li, B Xu, K Song, B Li - AIP Advances, 2023 - pubs.aip.org
Catastrophic optical mirror damage (COMD) and catastrophic optical bulk damage (COBD)
are the main factors that affect the reliability of semiconductor lasers. In this paper, we …
are the main factors that affect the reliability of semiconductor lasers. In this paper, we …
Optimization of GaAs-based 940 nm infrared light emitting diode with dual-junction design
H Lin, X Zeng, S Shi, H Tian, M Yang, K Chu… - Optoelectronics …, 2019 - Springer
Epitaxial growths of the GaAs/AlGaAs-based 940 nm infrared light emitting diodes (LEDs)
with dual junctions were carried out by using metalorganic chemical vapor deposition …
with dual junctions were carried out by using metalorganic chemical vapor deposition …
Surface features of the AlN optical coating deposited on the facet of a high-power AlGaAs/GaAs semiconductor laser
E Fomin, A Bondarev, S Slipchenko… - Journal of Physics …, 2019 - iopscience.iop.org
The facets of high-power AlGaAs/GaAs semiconductor lasers were coated with thin dielectric
AlN films using reactive ion-plasma technique. The refractive indices of the films were …
AlN films using reactive ion-plasma technique. The refractive indices of the films were …
Using AlN coatings to protect the surface of AlGaAs/GaAs system heterostructures from interaction with atmospheric oxygen
EV Fomin, AD Bondarev, IP Soshnikiv, NB Bercu… - Technical Physics …, 2020 - Springer
Thin aluminum nitride (AlN) films have been synthesized by reactive ion–plasma sputtering
(RIPS) and their properties have been studied in view of using this method for obtaining …
(RIPS) and their properties have been studied in view of using this method for obtaining …
Surface topography and optical properties of thin AlN films produced on GaAs (100) substrate by reactive ion-plasma sputtering
EV Fomin, AD Bondarev, AI Rumyantseva… - Technical Physics …, 2019 - Springer
A study of the surface topography and optical characteristics of thin AlN films used as
passivating and antireflection coatings deposited on n-GaAs (100) substrates by reactive ion …
passivating and antireflection coatings deposited on n-GaAs (100) substrates by reactive ion …