Nanowire based devices are most important candidate for future generation application. The unique advantage of Nanowire as a channel material is one dimensional conduction, low …
X Sun, L Hao, L Chen, X Guo, C Han, J Chen… - Applied Surface …, 2022 - Elsevier
Here, we demonstrate a rapidly responsive colorimetric hydrogen detector based on Pd/MoO 3 nanocomposites for hydrogen leakage monitoring at room temperature. The Mo …
N Kumar, A Raman - Microsystem technologies, 2020 - Springer
In this reported work, we have analyzed the different figure of merits for dopingless TFET. The charge-plasma based Planar-TFET does have a dual-gate with a half structure made …
HD Sehgal, Y Pratap, M Gupta… - IEEE Sensors Journal, 2021 - ieeexplore.ieee.org
In this paper, a junctionless (JL) Silicon FinFET (Fin Field effect transistor) has been designed as a hydrogen gas (H 2) sensor. An analytical model has been developed to …
In this work, a junctionless (JL) gate all around (GAA) silicon nanowire field-effect transistor sensor for the detection of hydrogen (H2) has been carried out. The sensors are designed to …
In this paper we investigate the optimized design of a short channel gate-all-around- junctionless (GAAJ) metal-oxidesemiconductor field-effect-transistor (MOSFET), including …
P Kaur, AS Buttar, B Raj - 2021 - nopr.niscpr.res.in
Imperative introduction of biosensor in the field of medicine, defence, food safety, security and environmental contamination detection acquired paramount attraction. Thus the …
In this paper, a new junctionless graphene nanoribbon tunnel field-effect transistor (JLGNR TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally …
In this article, a low-power hydrogen (H2) gas sensor has been proposed using a two- dimensional (2D) material based Double Gate Field Effect Transistor (2D-FET). It is …