The effect of fast neutron radiation has been investigated in High Electron Mobility
Transistors (HEMT's). Devices with different layer structures have been employed for the …

GaAs heterojunction field-effect transistors (HFETs) and inverters and ring oscillators
comprising HFETs have been exposed to neutron fluences of 5* 10/sup 13/n/cm/sup 2/to 1 …

A two-dimensional quantum well, strong-inversion model of threshold in AlGaAs/GaAs high-
electron-mobility transistors (HEMTs) has been extended to include the effects of Fermi-level …

A theoretical study on the influence of non‐abrupt doping profiles on the electronic subband
structure in one‐side modulation‐doped GaAs/AlGaAs quantum wells with graded interfaces …

Neutron irradiation effects on the IV characteristics of AlGaAs-GaAs high electron mobility
transistors and AlGaAs-InGaAs heterostructure insulated gate field-effect transistors are …

The dissertation is concerned with the modeling and characterization of MODFETs
(Modulation Doped Field-Effect Transistors) as photodetectors. Analytical derivation …

Using depletion approximation theory and introducing acceptor defects which can
characterize radiation induced deep-level defects in AlGaN/GaN heterostructures, we set up …

A triangular-well, one-subband, depletion layer model has been developed for the high
density region of a MODFET. The high density operation is defined as when the channel …

A strong-inversion depletion-layer model of threshold has been extended to describe
subthreshold IV characteristics in MODFETs. The results of this calculation yield the …

We present the results of the calculation of the low-temperature electron mobility in one-side
modulation-doped single asymmetric quantum wells, taking into account the presence of …