A review of DC fast chargers with BESS for electric vehicles: Topology, battery, reliability oriented control and cooling perspectives

H Polat, F Hosseinabadi, MM Hasan, S Chakraborty… - Batteries, 2023 - mdpi.com
The global promotion of electric vehicles (EVs) through various incentives has led to a
significant increase in their sales. However, the prolonged charging duration remains a …

Research on active thermal control: Actual status and future trends

J Kuprat, CH van der Broeck… - IEEE Journal of …, 2021 - ieeexplore.ieee.org
The trend toward integrating power electronic converters and pushing their device utilization
toward physical limits puts the spotlight on the junction temperature of the devices. The …

A digital twin based estimation method for health indicators of DC–DC converters

Y Peng, S Zhao, H Wang - IEEE Transactions on Power …, 2020 - ieeexplore.ieee.org
This article proposes a health indicator estimation method based on the digital-twin concept
aiming for condition monitoring of power electronic converters. The method is noninvasive …

Intelligent gate drivers for future power converters

J Henn, C Lüdecke, M Laumen… - … on Power Electronics, 2021 - ieeexplore.ieee.org
This article gives insights into recent developments in the field of power semiconductor gate
drivers that exhibit intelligent features. Such features are active switching transient control …

Power cycling test methods for reliability assessment of power device modules in respect to temperature stress

UM Choi, F Blaabjerg… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Power cycling test is one of the important tasks to investigate the reliability performance of
power device modules in respect to temperature stress. From this, it is able to predict the …

Real-time measurement of temperature sensitive electrical parameters in SiC power MOSFETs

A Griffo, J Wang, K Colombage… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
This paper examines a number of techniques for junction temperature estimation of silicon
carbide (SiC) MOSFET s devices based on the measurement of temperature sensitive …

Reviewing thermal-monitoring techniques for smart power modules

S Kalker, LA Ruppert… - IEEE Journal of …, 2021 - ieeexplore.ieee.org
The increasing demand for higher power device utilization and reliability in power electronic
systems is driving the integration of condition monitoring and active control in power …

A fast IGBT junction temperature estimation approach based on ON-state voltage drop

Y Yang, Q Zhang, P Zhang - IEEE Transactions on Industry …, 2020 - ieeexplore.ieee.org
Insulated gate bipolar transistor (IGBT) module is the most widely used power electronic
device in converters. Condition monitoring of IGBT is critical for avoiding sudden failures …

IGBT junction temperature estimation via gate voltage plateau sensing

CH van der Broeck, A Gospodinov… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
A method for in situ high-bandwidth junction temperature estimation of insulated-gate
bipolar transistors is introduced in this paper. The method is based on the acquisition of the …

Online junction temperature monitoring using intelligent gate drive for SiC power devices

Z Zhang, J Dyer, X Wu, F Wang… - … on Power Electronics, 2018 - ieeexplore.ieee.org
Junction temperature is an important design/operation parameter, as well as, a significant
indicator of device's health condition for power electronics converters. Compared to its …