[HTML][HTML] Effect of crystallinity on thermal atomic layer etching of hafnium oxide, zirconium oxide, and hafnium zirconium oxide

JA Murdzek, SM George - Journal of Vacuum Science & Technology A, 2020 - pubs.aip.org
Thermal atomic layer etching (ALE) can be achieved using sequential, self-limiting
fluorination and ligand-exchange reactions. Previous studies have demonstrated thermal …

Hafnium oxide: A thin film dielectric with controllable etch resistance for semiconductor device fabrication

A Wratten, D Walker, E Khorani, BFM Healy, NE Grant… - AIP Advances, 2023 - pubs.aip.org
Thin film dielectrics are ubiquitous in the manufacture of electronic devices and are
frequently deposited and etched away at various stages of device fabrication. We …

Nanoscale hafnium oxide passivation for photovoltaic and electronic devices

A Wratten - 2023 - wrap.warwick.ac.uk
This thesis presents a collection of work investigating the application of hafnium oxide
(HfO2) thin films as both wet-chemical and surface-state passivation layers for photovoltaic …

Modern Multireference Electronic Structure Theory

JET Smith - 2020 - search.proquest.com
Chemical systems that contain transition metals or are far from their equilibrium geometries
are often impossible to describe with a single electronic configuration. These problems …