A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band
T Maiwald, T Li, GR Hotopan, K Kolb… - Proceedings of the …, 2023 - ieeexplore.ieee.org
The evolution of wireless communication points to increasing demands on throughput for
data-intensive applications in modern society. Integrated millimeter-wave systems with …
data-intensive applications in modern society. Integrated millimeter-wave systems with …
Millimeter-wave power amplifier integrated circuits for high dynamic range signals
The next-generation 5G and beyond-5G wireless systems have stimulated a substantial
growth in research, development, and deployment of mm-Wave electronic systems and …
growth in research, development, and deployment of mm-Wave electronic systems and …
A high-efficiency 142–182-GHz SiGe BiCMOS power amplifier with broadband slotline-based power combining technique
In this article, a high-efficiency broadband millimeter-wave (mm-Wave) integrated power
amplifier (PA) with a low-loss slotline-based power combing technique is proposed. The …
amplifier (PA) with a low-loss slotline-based power combing technique is proposed. The …
A broadband 300 GHz power amplifier in a 130 nm SiGe BiCMOS technology for communication applications
A broadband three-stage pseudo-differential SiGe-interconnection bipolar transistor (HBT)
power amplifier (PA) for high-speed communication at around 300 GHz is presented. The …
power amplifier (PA) for high-speed communication at around 300 GHz is presented. The …
A 250–310 GHz power amplifier with 15-dB peak gain in 130-nm SiGe BiCMOS process for terahertz wireless system
This article presents a broadband THz power amplifier (PA) operating close to the maximum
oscillation frequency (f max) with proposed power combining and stagger-tuned gain …
oscillation frequency (f max) with proposed power combining and stagger-tuned gain …
Prospects for high-efficiency silicon and lll-V power amplifiers and transmitters in 100-300 GHz bands
Frequency bands between 100-300GHz, known as upper millimeterwave (UmmW), offer an
opportunity to converge communication and sensing systems to support future high …
opportunity to converge communication and sensing systems to support future high …
Analysis and Design of Lossy Capacitive Over-Neutralization Technique for Amplifiers Operating Near fMAX
D Simic, P Reynaert - … Transactions on Circuits and Systems I …, 2021 - ieeexplore.ieee.org
This paper proposes a technique to enhance the maximum achievable power gain (G MAX)
of the two-port active network (2PAN) in the near-f MAX region. This technique is based on …
of the two-port active network (2PAN) in the near-f MAX region. This technique is based on …
A 190-210GHz Power Amplifier with 17.7-18.5 dBm Output Power and 6.9-8.5% PAE
We report a high-efficiency G-band power amplifier in 250nm InP HBT technology. The
amplifier has four capacitively linearized common base stages. Four power cells are …
amplifier has four capacitively linearized common base stages. Four power cells are …
A 110-to-130GHz SiGe BiCMOS Doherty power amplifier with slotline-based power-combining technique achieving> 22dBm saturated output power and> 10% power …
The demand for 100+ Gbps data-rates in wireless communications has driven the rapid
development of silicon-based transceivers in the mm-wave and sub-THz bands. The broad …
development of silicon-based transceivers in the mm-wave and sub-THz bands. The broad …
[HTML][HTML] Gigahertz and terahertz transistors for 5G, 6G, and beyond mobile communication systems
Mankind is currently living in the era of mobile communication. Mobile communication
encompasses almost all areas of our daily life and is heavily used in most sectors of …
encompasses almost all areas of our daily life and is heavily used in most sectors of …