Abstract© The Institution of Engineering and Technology 2019. The modulus switching
technique has been used in some cryptographic applications as well as in cryptanalysis. For …

This study investigates the mechanisms of SiC whisker formation in the carbothermal
reduction of quartz to SiC in different gas atmospheres. Reduction of quartz by graphite was …

SiC polytypes have been studied for decades, both experimentally and with atomistic
simulations, yet no consensus has been reached on the factors that determine their stability …

As a hazardous solid waste rich in carbon and fluorine, spent pot lining (SPL) is a huge
threat to sustainable production and environmental security. As abundant carbon and …

3C-SiC epitaxially grown on Si displays a large wealth of extended defects. In particular,
single, double and triple stacking faults (SFs) are observed to coexist in several …

Chemical vapor deposited SiC coatings were investigated at different scales by X-Ray
diffraction, Raman microspectroscopy and transmission electron microscopy. They were …

An important issue in the technology of cubic SiC (3C–SiC) material for electronic device
applications is to understand the behavior of extended defects such as partial dislocation …

Combined with the fabrication of low-dimensional materials, certain silicon carbide color
centers can become excellent platforms for nano-optics, and be applied to quantum and …

Terrestrial moissanite (SiC) is widely reported as an ultra-high pressure mineral occurring in
kimberlites, diamonds and ultramafic/mafic rocks of mantle origin. However, the conditions of …

The competitive growth process of the 4H and 6H polytypes of SiC is studied by a
competitive Kinetic Monte Carlo model (KMC), which takes the atoms of silicon and carbon …