GaN power integration technology and its future prospects
The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …
implementing monolithic power integrated circuits. This article presents a comprehensive …
Multi-channel tri-gate GaN power Schottky diodes with low ON-resistance
J Ma, G Kampitsis, P Xiang, K Cheng… - IEEE Electron Device …, 2018 - ieeexplore.ieee.org
In this letter, we demonstrate high-performance lateral GaN power Schottky barrier diodes
based on a novel multi-channel tri-gate architecture. A significant reduction in ON-resistance …
based on a novel multi-channel tri-gate architecture. A significant reduction in ON-resistance …
More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With >230 MW/cm2 Power Figure-of-Merit
Y Wu, J Zhang, S Zhao, W Zhang… - IEEE Electron …, 2019 - ieeexplore.ieee.org
In this letter, more than 3000 V reverse blocking Schottky-drainAlGaN-channelHEMTs are
demonstrated for the first time. By using Schottky drain technology, forward breakdown …
demonstrated for the first time. By using Schottky drain technology, forward breakdown …
Single-stage active split-source inverter with high DC-link voltage utilization
Split-source inverter (SSI) has been proved to be an attractive single-stage dc/ac converter
for its compact structure, continuous input voltage, and input current. However, due to the …
for its compact structure, continuous input voltage, and input current. However, due to the …
An H8 current-source inverter using single-gate WBG bidirectional switches
Due to the high forward voltage drop of reverse-blocking (RB) switches, conventional current-
source inverters (CSIs) typically suffer efficiency penalties. Bidirectional (BD) switches, on …
source inverters (CSIs) typically suffer efficiency penalties. Bidirectional (BD) switches, on …
AlN/GaN superlattice channel HEMTs on silicon substrate
S Liu, W Zhang, J Zhang, X Song, Y Wu… - … on Electron Devices, 2021 - ieeexplore.ieee.org
High-electron-mobility transistor (HEMT) with AlN/GaN superlattice (SL) channel has been
demonstrated on a silicon substrate. High OFF-state breakdown voltage V BR of 670 V (gate …
demonstrated on a silicon substrate. High OFF-state breakdown voltage V BR of 670 V (gate …
1.3 kV reverse-blocking AlGaN/GaN MISHEMT with ultralow turn-on voltage 0.25 V
H Wang, W Mao, S Zhao, M Du, Y Zhang… - IEEE Journal of the …, 2020 - ieeexplore.ieee.org
A reverse-blocking AlGaN/GaN metal-insulator-semiconductor high electron mobility
transistor (RB-MISHEMT) is proposed and fabricated. Compared with the conventional …
transistor (RB-MISHEMT) is proposed and fabricated. Compared with the conventional …
Reverse blocking p-GaN gate HEMTs with multicolumn p-GaN/Schottky alternate-island drain
R Sun, P Luo, F Wang, C Liu, W Xu… - IEEE Electron …, 2022 - ieeexplore.ieee.org
The reverse blocking p-type GaN (p-GaN) gate high electron mobility transistors with multi-
column p-GaN/Schottky alternate-island drain (MPS-HEMTs) are proposed and …
column p-GaN/Schottky alternate-island drain (MPS-HEMTs) are proposed and …
Au-free Al₀. ₄Ga₀. ₆N/Al₀. ₁Ga₀. ₉N HEMTs on silicon substrate with high reverse blocking voltage of 2 kV
Y Wu, W Zhang, J Zhang, S Zhao, J Luo… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this article, the Au-free complementary metal oxide semiconductor (CMOS) transistor
compatible AlGaN-channel high-electron-mobility transistors (HEMTs) on silicon substrate …
compatible AlGaN-channel high-electron-mobility transistors (HEMTs) on silicon substrate …
Novel multisource DC-DC converter for All-electric hybrid energy systems
In this article, a novel nonisolated multiple input dc-dc converter (MIC) is proposed for all-
electric hybrid energy storage systems. The proposed MIC is capable of bidirectional …
electric hybrid energy storage systems. The proposed MIC is capable of bidirectional …