Electromechanical phenomena in semiconductors are still poorly studied from a
fundamental and an applied science perspective, even though significant strides have been …

We study the extension of a composite fiber of piezoelectric dielectrics and nonpiezoelectric
semiconductors. A theoretical analysis is performed using a one-dimensional model. It is …

The main intent of this paper is to present an exhaustive description of the most relevant
mathematical models for the electromechanical properties of heterostructure quantum dots …

It has recently been postulated that GaN high electron mobility transistors under high voltage
stress degrade as a result of defect formation induced by excessive mechanical stress that is …

Micro-Raman spectroscopy was used to study piezoelectric strain in Al Ga N∕ Ga N
heterostructure field-effect transistors under bias. The measurements were made through …

A fully coupled multi-dimensional continuum model of the thermoelectromechanics of GaN
HEMTs is presented and discussed. The governing equations are those of linear …

Based on the k· p model with 8× 8 band Hamiltonian, we demonstrate that the electronic
energy band in a wurtzite piezoelectric semiconductor (PSC) rod can be tuned by a pair of …

The three-dimensional carrier confinement in GaN nanodiscs embedded in GaN/Al x Ga 1−
x N nanowires and its effect on their photoluminescence properties is analyzed for Al …

Application of Keating's valence force field model to non-ideal wurtzite materials - ScienceDirect
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The performance of a piecewise-stressed ZnO piezoelectric semiconductor nanofiber is
studied with the multi-field coupling theory. The fields produced by equal and opposite …