Edge-emitting mode-locked quantum-dot (QD) lasers are compact, highly efficient sources
for the generation of picosecond and femtosecond pulses and/or broad frequency combs …

▪ Abstract As a result of their fully quantized electronic states and high radiative efficiencies,
self-assembled quantum dots have enabled major advances in fundamental physics studies …

This review seeks to extend the scope of both the experimental and theoreticalwork carried
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …

We present a systematic investigation of the elastic, electronic, and linear optical properties
of quantum dot double heterostructures in the frame of eight-band k⋅ p theory. Numerical …

Carrier relaxation and recombination in self-organized InAs/GaAs quantum dots (QD's) is
investigated by photoluminescence (PL), PL excitation (PLE), and time-resolved PL …

Abstract Comparison of near-field and far-field photoluminescence excitation (PLE) spectra
gives new insight into the carrier relaxation process in InGaAs/GaAs self-assembled …

Phonon-assisted exciton transitions in self-organized InAs/GaAs quantum dots (QDs) are
investigated by photoluminescence (PL) and PL excitation spectroscopy. An unexpectedly …

The phonon bottleneck in quantum dots is reexamined theoretically within the intrinsic
phonon scattering mechanism. In the coupled-mode-equation formalism, an analytical …

Carrier relaxation in self-organized In 0.4 Ga 0.6 A s/G a A s quantum dots is investigated by
time-resolved differential transmission measurements. The dots have a base dimension of …

We report time-resolved photoluminescence measurements as a function of temperature for
InAs quantum dots grown by molecular-beam epitaxy on GaAs (100). As the temperature is …