In this work, we investigate the electronic and optical properties of monolayer GeSe and the possibility of enhancement the photocatalytic activities for the water splitting of monolayer …
We investigate the mechanical, electronic, and optical properties of monolayer GeX (X= S, Se, and Te) with γ structure based on density-functional theory calculations. We find that the …
V Khuong Dien, P Thi Bich Thao, N Thi Han… - Physical Review B, 2023 - APS
Monolayer germanium sulfide (GeS) has gained significant attention for its exceptional anisotropic electronic conductance, notable excitonic effects, and wide range of …
NT Kaner, Y Wei, Y Jiang, W Li, X Xu, K Pang, X Li… - ACS …, 2020 - ACS Publications
Group IV monochalcogenides exhibit spontaneous polarization and ferroelectricity, which are important in photovoltaic materials. Since strain engineering plays an important role in …
C Ren, S Wang, H Tian, Y Luo, J Yu, Y Xu, M Sun - Scientific reports, 2019 - nature.com
Using first-principles calculations, we investigated the electronic properties and band alignment of monolayered group III monochalcogenides. First, we calculated the structural …
M Ait tamerd, M Zanouni, A Nid‐bahami… - … Journal of Quantum …, 2022 - Wiley Online Library
In this paper, the first‐principles calculations based on the Density Functional Theory (DFT) have been used to study the effect of strain on the structural, electronic, optical and …
A El-Bakkali, S Sadki, LB Drissi, F Djeffal - Physica E: Low-dimensional …, 2021 - Elsevier
Using first-principles calculations, we study the structural, electronic and optical properties of the monolayer, bilayer and trilayer germanium monosulfide GeS. The results reveal an …
In this work, first-principles calculations were employed to investigate the biaxial strain effects on the electronic structure and optical properties of As 2 C 3 and AsMC 3 (M: Sb, Bi) …
In this work, we study the electronic, optical, and photocatalytic properties of fully hydrogenated GeC monolayer under strain engineering and external electric field using first …