In this study, for the very first time developing of n-and p-type 3-D single-channel (SC) FinFET and gate-all-around (GAA) Multi-Bridge-Channel FETs (MBCFET) like nanowire FET …
In this paper, multi-channel nanowire (NW) performance is significantly improved by symmetric and asymmetric spacer length optimization. Device performance metrics …
Moore's law states that the technical innovations are being absorbed already. The device's controllability has dramatically improved since moving from a straightforward MOSFET …
Abstract The Nanosheet FET (NS FET) has proven to be a potential candidate for sub-5-nm nodes. For the first time, in this manuscript, the NS FET performance is demonstrated by …
Field-effect-transistor-based sensors are essential for environmental monitoring, industrial analyte detection, medical diagnosis, etc. This letter unveiled the process variation, self …
SOI junctionless (JL) FinFETs are well-suited for future wireless communication systems; however, they suffer from the self-heating effect (SHE), which diminishes performance at …
The self-heating effect (SHE) poses a significant obstacle for ultra-scaled devices, including Fin Field Effect Transistors (FinFETs) designed for sub-nanometer technology. This study …
For improving thermal characteristics and on-current () in vertically stacked nanosheet field- effect transistor (NSFET), the effect of parasitic channel height () on thermal and electrical …
In the last few years, a significant interest has been shown in 2D field effect transistors (2D FETs) as an appropriate candidate for advanced electronics devices. This study presents a …