Selective high-resistance zones formed by oxygen annealing for-GaO Schottky diode applications
Selective area doping technique is essential for diversifying semiconductor device
structures. In this letter, selective high-resistance zones on-Ga2O3 wafers were successfully …
structures. In this letter, selective high-resistance zones on-Ga2O3 wafers were successfully …
Experimental Study on Static and Dynamic Characteristics of Ga2O3 Schottky Barrier Diodes With Compound Termination
Y Wei, X Luo, Y Wang, J Lu, Z Jiang… - … on Power Electronics, 2021 - ieeexplore.ieee.org
In this letter, the ultrafast reverse recovery β-Ga 2 O 3 Schottky barrier diode (SBD) with
improved breakdown voltage is proposed and investigated experimentally. It features the …
improved breakdown voltage is proposed and investigated experimentally. It features the …
Enhancing -GaO Schottky Barrier Diodes' Performance Through Low-Temperature Post-Annealing: Achieving Optimal Forward Current–Voltage Characteristics
C Yu, H Hu, Y Wang, X Jia, S Huang… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In this article, we present a low-temperature post-annealing (LTPA) technique to achieve
ideal forward current-voltage (I− V) characteristics for-gallium oxide (-Ga2O3) Schottky …
ideal forward current-voltage (I− V) characteristics for-gallium oxide (-Ga2O3) Schottky …
Surface Pretreatment by Low-Temperature O Gas Annealing for Performance Improvement in Pt/-GaO Schottky Barrier Diodes
H Hu, Y Wang, X Jia, Y Li, B Li, Z Luo… - … on Electron Devices, 2023 - ieeexplore.ieee.org
We report a method for improving the electrical performance of Pt/-Ga2O3 Schottky barrier
diodes (SBDs) through surface pretreatment using low-temperature O2 gas annealing. We …
diodes (SBDs) through surface pretreatment using low-temperature O2 gas annealing. We …
Defect Identification in β-Ga2O3 Schottky Barrier Diodes with electron radiation and annealing regulating
Identifying the impact of native/irradiated traps on electrical properties is vital for the
implementation of high-performance gallium oxide (Ga2O3) power devices. In this work, the …
implementation of high-performance gallium oxide (Ga2O3) power devices. In this work, the …
Selective Area Carrier Concentration Modulation of Single Crystal -Ga2O3 film Through High Temperature Oxygen Annealing Process
In this work, we demonstrate that high-temperature oxygen annealing, a unique and low-
cost process, can be used to selectively modulate the carrier concentration of β-Ga_2O_3 …
cost process, can be used to selectively modulate the carrier concentration of β-Ga_2O_3 …