Machining processes have made technological leaps in achieving ultraprecision material
removal and surface finishing at the submicrometric scale. At this level of precision, size …

Corrosion–wear interactions play a very crucial role in developing many technological
processes. One of them is chemical–mechanical planarization (CMP) of metallic thin films for …

The essential parts of interconnects for silicon based logic and memory devices consist of
metal wiring (eg copper), a barrier metal (Ta, TaN), and of insulation (SiO2, low-k polymer) …

With the rapid development of semiconductors, the number of materials needed to be
polished sharply increases. The material properties vary significantly, posing challenges to …

Polishing behavior of copper and tantalum using aqueous slurries containing alumina and
silica abrasives with and without/glycine has been investigated at different pH values. It was …

We report improved planarization efficiency (ratio of step height reduction and removed
layer thickness) in chemical–mechanical planarization (CMP) of copper lines at a down …

Chemical mechanical polishing (CMP) of metal and dielectric films was performed using
mixed abrasive slurries (MAS). MAS containing alumina and silica particles dispersed in …

Interaction of silica and silicon nitride with polyurethane surfaces is rather poorly studied
despite being of great interest for modern semiconductor industry, eg, for chemical …

Peroxide-based slurries are commonly used in chemical mechanical polishing (CMP) of
copper. When glycine is included in such a slurry, the planarization efficiency of Cu-CMP is …

Defect-control is a critical requirement for chemical mechanical planarization (CMP) of the
ultrathin diffusion barriers considered for the new Cu-interconnects. The challenging task of …