We report on the optical properties of the InGaN-based red LED grown on a c-plane
sapphire substrate. Blue emission due to phase separation was successfully reduced in the …

Rare earth (RE) elements are prime constituents in a large amount of innovative materials
and several technological advances would not be possible without their contribution. In this …

Advances in lighting and quantum computing will require new degrees of control over the
emission of photons, where localized defects and the quantum confinement of carriers can …

The origin of the nanoscale emission inhomogeneities of red emitting InGaN/InGaN
quantum wells (QWs) grown directly on a GaN template and on an InGaN on sapphire …

Gallium nitride active layers co-doped in situ with magnesium and europium, GaN (Mg): Eu,
show strong red photoluminescence (PL), promising for red light emitting diode (LED) …

Gallium nitride (GaN) is a key material when it comes to light-emitting diodes (LEDs) and
has pushed the LED revolution in lighting and displays. The concept of down-conversion of …

The development of efficient electrically driven color-tunable solid-state light sources will
enable new capabilities in lighting and display technologies. Although alternative light …

A physically intuitive current injection efficiency model for a GaN: Eu quantum well (QW) has
been developed to clarify the necessary means to achieve device quantum efficiency higher …

Metal-nitrides of hafnium nitride (HfN), zirconium nitride (ZrN) and titanium nitride (TiN) are
investigated as plasmonic materials to enhance the internal quantum efficiency of a GaN: Eu …

High‐concentration doping of Eu ions working as luminescent centers in GaN is required to
improve light output of optical devices. GaN nanocolumns can be used to achieve high …