Gallium nitride (GaN)-based light-emitting diodes (LEDs) are highly energy efficient and
their widespread usage in lighting can induce significant worldwide electricity savings. To …

We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam
Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions …

LEDs based on hexagonal InGaN/GaN quantum wells are dominant technology for many
lighting applications. However, their luminous efficacy for green and amber emission and at …

Gallium nitride (GaN) semiconductors and their broadband InGaN alloys in their hexagonal
phase have been extensively studied over the past 30 years and have allowed the …

The luminescence properties of cubic GaN films grown upon 3C‐SiC/Si (001) substrates by
MOCVD were investigated. The spectra show luminescence peaks which are associated …

Transmission electron microscopy and x-ray diffraction measurements reveal the presence
of stacking faults SFs in undoped cubic GaN thin layers. We demonstrate the importance of …

The suitability of Al x Ga 1− x N nucleation layers (NLs) with varying Al fraction x for the
metal organic vapour phase epitaxy of zincblende GaN on (001) 3C-SiC was investigated …

The photoluminescence spectra of a zincblende GaN epilayer grown via metal-organic
chemical vapour deposition upon 3C-SiC/Si (001) substrates were investigated. Of particular …

Cubic zincblende GaN films were grown by metalorganic vapour-phase epitaxy on 3C-
SiC/Si (0 0 1) templates and characterized using Nomarski optical microscopy, atomic force …

The structural and electrical properties of Mg-doped cubic GaN epi-layers grown by plasma-
assisted molecular beam epitaxy (PAMBE) near Ga rich conditions are investigated. The …