Single‐walled carbon nanotubes (SWCNTs) have been considered as one of the most
promising electronic materials for the next‐generation electronics in the more Moore era …

Self-heating effect (SHE) is a severe issue in advanced nano-scaled devices such as
stacked nanosheet field-effect transistors (NS-FET), which raises the device temperature …

We report the effect of zinc-tin-oxide (ZTO) by spray coating on indium gallium zinc oxide
(IGZO) thin-film transistor (TFT) for the improvement of both stability and performance. The …

A small bandgap and light carrier effective mass (m 0) lead to obvious ambipolar transport
behavior in carbon nanotube (CNT) field-effect transistors (FETs), including a high off-state …

We propose a direct approach for calculating individual energy of polar semiconductor
interfaces using density functional theory calculations. This approach is applied to polar …

A microelectronic device including, on a substrate, at least one element such as a SRAM
memory cell; one or more first transistor (s), respectively including a number k of channels …

In this work, the authors study a polycrystalline silicon thin-film transistor (poly-Si TFT) with
oxide/nitride/oxide (ONO) stack gate dielectrics and multiple nanowire channels for the …

This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory
with a structure that is composed of Ω-gate nanowires (NWs). Experimental results show that …

A static random access memory (SRAM) device includes a circuit element that includes a
first inverter having a first load transistor and a first drive transistor and a second inverter …

This work demonstrates the feasibility of a polycrystalline silicon thin-film transistor (poly-Si
TFTs) nonvolatile memory (NVM) that utilizes a Pi-shaped gate (Pi-gate) and multiple …