Recent progress in selector and self‐rectifying devices for resistive random‐access memory application
The recent progress of selector and self‐rectifying devices for resistive random‐access
memory applications is reviewed. In particular, the performance of crossbar arrays based on …
memory applications is reviewed. In particular, the performance of crossbar arrays based on …
Investigating selectorless property within niobium devices for storage applications
PH Chen, CY Lin, TC Chang… - … Applied Materials & …, 2022 - ACS Publications
Resistive random-access memory (RRAM) crossbar arrays have shown significant promise
as drivers of neuromorphic computing, in-memory computing, and high-density storage …
as drivers of neuromorphic computing, in-memory computing, and high-density storage …
Towards on-receptor computing: Electronic nociceptor embedded neuromorphic functionalities at nanoscale
With the rapid progress of artificial intelligence (AI), integration of biological functionalities
into electronic devices has become crucial for performing complex tasks and adaptation to …
into electronic devices has become crucial for performing complex tasks and adaptation to …
Bending resistant multibit memristor for flexible precision inference engine application
This work reports 2-bits/cell hafnium oxide-based stacked resistive random access memory
devices fabricated on flexible polyimide substrates for neuromorphic applications …
devices fabricated on flexible polyimide substrates for neuromorphic applications …
Impact of the barrier layer on the high thermal and mechanical stability of a flexible resistive memory in a neural network application
An artificial synaptic device with continuous conductance variation is essential for the
hardware implementation of bioinspired neuromorphic systems. With increasing …
hardware implementation of bioinspired neuromorphic systems. With increasing …
Improvement in threshold switching performance using Al₂O₃ interfacial layer in Ag/Al₂O₃/SiOₓ/W cross-point platform
An Al 2 O 3/SiOx bi-layer cross-point selector was proposed and experimentally
demonstrated in this work to mitigate the sneak path leakage issue in the high density …
demonstrated in this work to mitigate the sneak path leakage issue in the high density …
Electrically stimulated synaptic resistive switch in solution-processed silicon nanocrystal thin film: formation mechanism of oxygen vacancy filament for synaptic …
We demonstrate an electrically stimulated synaptic resistive switch in a silicon nanocrystal
(Si NC) thin film. A forming-free resistive switching occurs on the surface of natively oxidized …
(Si NC) thin film. A forming-free resistive switching occurs on the surface of natively oxidized …
Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfOx buffer layer
Flexible electronic devices have generated large research interest in recent years. Herein,
we demonstrate a resistive random access memory (ReRAM) device fabricated on a flexible …
we demonstrate a resistive random access memory (ReRAM) device fabricated on a flexible …
Improved resistive switching characteristics of Ag/Al: HfO x/ITO/PET ReRAM for flexible electronics application
Abstract The Al-doped HfO x flexible resistive random access memory (ReRAM) device with
Ag top electrode (TE) is fabricated on indium tin oxide (ITO) coated polyethylene …
Ag top electrode (TE) is fabricated on indium tin oxide (ITO) coated polyethylene …
Controllable coexistence of threshold and non-volatile crosspoint memory for highly linear synaptic device applications
A highly reliable and versatile resistive memory device that demonstrates threshold and non-
volatile memory (NVM) switching behaviour depending on the compliance current (CC) …
volatile memory (NVM) switching behaviour depending on the compliance current (CC) …