WS2 Nanosheet/Si p–n Heterojunction Diodes for UV–Visible Broadband Photodetection
High-quality, continuous transition-metal dichalcogenide (TMD) thin films with large-area
coverage are the prerequisites for practical device applications. To address the growing …
coverage are the prerequisites for practical device applications. To address the growing …
Microfluidic-enhanced 3-D photoanodes with free interfacial energy barrier for photoelectrochemical applications
The sluggish reaction kinetics and poor interfacial mass transfer seriously limit the industrial
applications of planar photoelectrocatalytic devices. Here, the principle of 3-D flow-through …
applications of planar photoelectrocatalytic devices. Here, the principle of 3-D flow-through …
Device characteristics of Schottky barrier diodes using In-Ga-Zn-O semiconductor thin films with different atomic ratios
JW Kim, TJ Jung, SM Yoon - Journal of Alloys and Compounds, 2019 - Elsevier
Oxide semiconductor Schottky barrier diodes (SBDs) were fabricated by using amorphous In-
Ga-Zn-O (IGZO) semiconducting thin films with different atomic ratios. Higher rectification …
Ga-Zn-O (IGZO) semiconducting thin films with different atomic ratios. Higher rectification …
Low-intensity UV light sensor based on p-NiO/n-Si heterojunction
NH Al-Hardan, NM Ahmed… - Materials Research …, 2020 - iopscience.iop.org
We studied the performance of a photodiode UV sensor based on a p-NiO/n-Si
heterojunction. NiO thin film was prepared via a two-step process. In the first step, a thin film …
heterojunction. NiO thin film was prepared via a two-step process. In the first step, a thin film …
Structural, optical and electrical properties of co-sputtered p-type ZnO: Cu thin-films
P-type Cu-doped zinc oxide thin-films were successfully obtained by co-sputtering method at
300° C. XRD, FESEM and EDS were utilized for structural and morphological studies. As …
300° C. XRD, FESEM and EDS were utilized for structural and morphological studies. As …
Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure
HH Gullu, Ö Bayraklı Sürücü, M Terlemezoglu… - Journal of Materials …, 2019 - Springer
In this study, temperature-dependent current–voltage (I–V), frequency-dependent
capacitance–voltage (C–V) and conductance–voltage (G/ω-V)(G/ω-V) measurements are …
capacitance–voltage (C–V) and conductance–voltage (G/ω-V)(G/ω-V) measurements are …