A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
Recent advancements in photoelectrochemical water splitting for hydrogen production
Sunlight is the most abundant and inexhaustible energy source on earth. However, its low
energy density, dispersibility and intermittent nature make its direct utilization with industrial …
energy density, dispersibility and intermittent nature make its direct utilization with industrial …
High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation
Ferroelectric tunnel junctions use a thin ferroelectric layer as a tunnelling barrier, the height
of which can be modified by switching its ferroelectric polarization. The junctions can offer …
of which can be modified by switching its ferroelectric polarization. The junctions can offer …
Controllable electrical, magnetoelectric and optical properties of BiFeO3 via domain engineering
Abstract Bismuth ferrite (BiFeO 3, BFO) as one of the few single-phase room-temperature
multiferroics, has aroused ever-increasing enthusiasm in research communities during the …
multiferroics, has aroused ever-increasing enthusiasm in research communities during the …
Two-dimensional materials with piezoelectric and ferroelectric functionalities
Abstract Two-dimensional (2D) layered materials with a non-centrosymmetric structure
exhibit great potential for nano-scale electromechanical systems and electronic devices …
exhibit great potential for nano-scale electromechanical systems and electronic devices …
Multiferroic bismuth ferrite-based materials for multifunctional applications: Ceramic bulks, thin films and nanostructures
Among the different types of multiferroic compounds, bismuth ferrite (BiFeO 3; BFO) stands
out because it is perhaps the only one being simultaneously magnetic and strongly …
out because it is perhaps the only one being simultaneously magnetic and strongly …
Sub-nanosecond memristor based on ferroelectric tunnel junction
Next-generation non-volatile memories with ultrafast speed, low power consumption, and
high density are highly desired in the era of big data. Here, we report a high performance …
high density are highly desired in the era of big data. Here, we report a high performance …
Ferroelectric tunnel junctions: modulations on the potential barrier
Z Wen, D Wu - Advanced materials, 2020 - Wiley Online Library
Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for
potential applications in next‐generation memories, owing to attractive advantages such as …
potential applications in next‐generation memories, owing to attractive advantages such as …
A low-power Si: HfO2 ferroelectric tunnel memristor for spiking neural networks
X Yan, X Jia, Y Zhang, S Shi, L Wang, Y Shao, Y Sun… - Nano Energy, 2023 - Elsevier
As key components of the human brain's neural network, synapses and neurons are
important processing units that enable highly complex neuromorphic systems. Spiking …
important processing units that enable highly complex neuromorphic systems. Spiking …
Essential characteristics of memristors for neuromorphic computing
W Chen, L Song, S Wang, Z Zhang… - Advanced Electronic …, 2023 - Wiley Online Library
The memristor is a resistive switch where its resistive state is programable based on the
applied voltage or current. Memristive devices are thus capable of storing and computing …
applied voltage or current. Memristive devices are thus capable of storing and computing …